CFP last date
20 January 2025
Call for Paper
February Edition
IJCA solicits high quality original research papers for the upcoming February edition of the journal. The last date of research paper submission is 20 January 2025

Submit your paper
Know more
The week's pick
Responsive image
SFLA-Based Line Balancing and Task Optimization in Master-Slave Controlled Hanger Transportation Systems for Garment Production

Duc Hoang Nguyen
Random Articles
Reseach Article

Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

Published on March 2012 by Rajesh B. Lohani, Jaya V. Gaitonde
journal_cover_thumbnail

International Conference and Workshop on Emerging Trends in Technology
Foundation of Computer Science USA
ICWET2012 - Number 6
March 2012
Authors: Rajesh B. Lohani, Jaya V. Gaitonde
c78a907c-aa36-4312-ab00-643d916117a1

Rajesh B. Lohani, Jaya V. Gaitonde . Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods. International Conference and Workshop on Emerging Trends in Technology. ICWET2012, 6 (March 2012), 36-40.

@article{
author = { Rajesh B. Lohani, Jaya V. Gaitonde },
title = { Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods },
journal = { International Conference and Workshop on Emerging Trends in Technology },
issue_date = { March 2012 },
volume = { ICWET2012 },
number = { 6 },
month = { March },
year = { 2012 },
issn = 0975-8887,
pages = { 36-40 },
numpages = 5,
url = { /proceedings/icwet2012/number6/5356-1047/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference and Workshop on Emerging Trends in Technology
%A Rajesh B. Lohani
%A Jaya V. Gaitonde
%T Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods
%J International Conference and Workshop on Emerging Trends in Technology
%@ 0975-8887
%V ICWET2012
%N 6
%P 36-40
%D 2012
%I International Journal of Computer Applications
Abstract

OPFET (Optical Field Effect Transistor) is a useful device for optical communication and as photo detector. In this paper, the switching characteristics of the back illuminated OPFET are plotted using finite difference methods by solving the without time dependent continuity equations in which the incident radiation is allowed to enter through the substrate by inserting a fiber partially into the substrate. The switching parameters include transconductance, channel conductance, drain to source resistance, gate to source, gate to drain and drain to source capacitances.

References
  1. H. Mizuno, “Microwave characteristics of an optically controlled GaAs-MESFET”, IEEE Trans. Microwave Theory Tech., Vol. MlT-31, pp. 59&600, 1983.
  2. A. A. De Salles, “Optical control of GaAs MESFET’s”, IEEE Trans. Microwave Theory Tech., Vol. MTT-31, pp. 812-820, 1983.
  3. J. L. Cantier, D. Pasqwt, and P. Ponvil, “Optical effects on the static and dynamic characteristics of GaAs-MESFET”, IEEE Trans. Microwave Theory Tech., Vol. MTT-33, pp. 819-822, 1985.
  4. R N. Simons and K. B. Bhasin, “Analysis of optically controlled microwave/millimeter wave device structure”, IEEE Trans. Microwave Theory Tech., Vol. MTT-34, pp. 1349-1355, 1986.
  5. R N. Simons, ‘‘Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET”, IEEE Trans. Microwave Theory Tech., Vol. MTT-35, pp. 1444-1455, 1987.
  6. R. B. Darling and J. P. Uyemura, “Optical gain and large-signal characteristics of illuminated GaAs MESFET’s”, IEEE J. Quantum Electron, Vol. QE-23, pp. 1160-1171, 1987.
  7. Sunita Mishra, V. K. Singh and B. B. Pal, “Effect of Radiation and Surface Recombination on the Characteristics of an Ion-Implanted GaAs MESFET”, IEEE Transactions on Electron Devices, Vol. 37, No. 1, pp. 2-10, January 1990.
  8. P. Chakrabarti, N. L. Shrestha, S. Srivastava, and V. Khemka, “An improved model of an ion-implanted GaAs OPFET”, IEEE Transactions on Electron Devices, Vol. 39, pp. 2050-2059, 1992.
  9. P. Chakrabarti, S. K. Shrestha, A. Srivastava, and D. Saxena, “Switching characteristics of an optically controlled GaAs-MESFET”, IEEE Trans. Microwave Theory Tech., Vol. 42, No. 3, March 1994.
  10. Youssef Zebda and S. Abu_Helweh, “AC Characteristics of Optically Controlled MESFET (OPFET)”, Journal of Lightwave Technology, Vol. 15, No. 7, pp. 1205-1212, July 1997.
  11. Nandita Saha Roy and B. B. Pal, “Frequency-Dependent OPFET Characteristics with Improved Absorption under Back Illumination”, Journal of Lightwave Technology, Vol. 18, No. 4, pp. 604-613, April 2000.
  12. Rajesh B. Lohani and Jaya V. Gaitonde, “I-V and switching characteristics of back illuminated OPFET using finite difference methods”, International Journal of Computer Applications (0975 – 8887), Vol. 31, No. 4, pp. 5-11, October 2011.
  13. P. Chakrabarti, M. Madheswaran, A. Gupta and N. A. Khan, “Numerical Simulation of an Ion-Implanted GaAs OPFET”, IEEE Transactions on Microwave Theory and Techniques, Vol. 46, No. 10, pp. 1360-1366, October 1998.
Index Terms

Computer Science
Information Sciences

Keywords

OPFET photodetector finite-difference methods back illumination