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Reseach Article

Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods

Published on March 2012 by Rajesh B. Lohani, Jaya V. Gaitonde
International Conference and Workshop on Emerging Trends in Technology
Foundation of Computer Science USA
ICWET2012 - Number 6
March 2012
Authors: Rajesh B. Lohani, Jaya V. Gaitonde
c78a907c-aa36-4312-ab00-643d916117a1

Rajesh B. Lohani, Jaya V. Gaitonde . Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods. International Conference and Workshop on Emerging Trends in Technology. ICWET2012, 6 (March 2012), 36-40.

@article{
author = { Rajesh B. Lohani, Jaya V. Gaitonde },
title = { Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods },
journal = { International Conference and Workshop on Emerging Trends in Technology },
issue_date = { March 2012 },
volume = { ICWET2012 },
number = { 6 },
month = { March },
year = { 2012 },
issn = 0975-8887,
pages = { 36-40 },
numpages = 5,
url = { /proceedings/icwet2012/number6/5356-1047/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference and Workshop on Emerging Trends in Technology
%A Rajesh B. Lohani
%A Jaya V. Gaitonde
%T Frequency Dependent Switching Characteristics of Back Illuminated OPFET using Finite Difference Methods
%J International Conference and Workshop on Emerging Trends in Technology
%@ 0975-8887
%V ICWET2012
%N 6
%P 36-40
%D 2012
%I International Journal of Computer Applications
Abstract

OPFET (Optical Field Effect Transistor) is a useful device for optical communication and as photo detector. In this paper, the switching characteristics of the back illuminated OPFET are plotted using finite difference methods by solving the without time dependent continuity equations in which the incident radiation is allowed to enter through the substrate by inserting a fiber partially into the substrate. The switching parameters include transconductance, channel conductance, drain to source resistance, gate to source, gate to drain and drain to source capacitances.

References
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Index Terms

Computer Science
Information Sciences

Keywords

OPFET photodetector finite-difference methods back illumination