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Transit-Time model for short-gate length ion-implanted GaAs OPFETs
Published on December 2011 by
Shweta Tripathi,
S. Jit
| International Conference on Electronics, Information and Communication Engineering |
| Foundation of Computer Science USA |
| ICEICE - Number 5 |
| December 2011 |
| Authors: Shweta Tripathi, S. Jit |
| edb57ddc-8d21-461b-af97-d5c4208ad8b4 |
Shweta Tripathi, S. Jit . Transit-Time model for short-gate length ion-implanted GaAs OPFETs. International Conference on Electronics, Information and Communication Engineering. ICEICE, 5 (December 2011), 22-24.
@article{
author = {
Shweta Tripathi,
S. Jit
},
title = { Transit-Time model for short-gate length ion-implanted GaAs OPFETs },
journal = {
International Conference on Electronics, Information and Communication Engineering
},
issue_date = { December 2011 },
volume = { ICEICE },
number = { 5 },
month = { December },
year = { 2011 },
issn = 0975-8887,
pages = {
22-24
},
numpages = 3,
url = {
/specialissues/iceice/number5/4305-iceice038/
},
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Special Issue Article
%1 International Conference on Electronics, Information and Communication Engineering
%A Shweta Tripathi
%A S. Jit
%T Transit-Time model for short-gate length ion-implanted GaAs OPFETs
%J International Conference on Electronics, Information and Communication Engineering
%@ 0975-8887
%V ICEICE
%N 5
%P 22-24
%D 2011
%I International Journal of Computer Applications
Abstract
This paper presents transit time model for short gate –length ion-implanted GaAs OPFET. The finite transit-time that carriers take to traverse the channel from source to drain is calculated considering the effect of onset of velocity saturation.
References
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