Dual modulus prescaler is one of the main building blocks in Frequency synthesizers. Which gives the flexibility to select channels on the basis of the number of times each of the modulus is selected. Modern frequency synthesizer requires high speed, low power prescaler. This paper proposes the design of such a prescaler using the carbon nanotube based transistor. The two most important performance parameters in the proposed design is speed and power. The biggest limiting factor in this optimization is the technology. The prescaler is often implemented with CMOS technologies. In this paper CNTFET is introduced for designing the high speed and low power 2/3 dual modulus prescaler.

1. H. Knapp, J. Bock, M. Wurzer, G. Ritzberger, K. Au_nger, and L. Treitinger, "2GHz/2 mW and 12 GHz/ 30 mW dual-modulus prescalers in silicon bipolar technology," in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, September 2000, pp. 164-167.
2. L. Tournier, M. Sie, and J. Gra_euil, "A 14. 5 GHz, 0. 35-micron frequency divider for dual-modulus prescaler," IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, June 2002, pp. 227-230.
3. B. -U Klepser, "SiGe Bipolar 5. 5 GHz dual-modulus prescaler," IEE Electronics Letters, vol. 35, no. 20, pp. 1728-1730, September 1999.
4. T. S. Aytur and B. Razavi, "A 2-GHz, 6-mW BiCMOS frequency synthesizer," IEEE Journal of Solid-State Circuits, vol. 30, no. 12, pp. 1457-1462, December1995.
5. J. Craninckx and M. Steyaert, "A 1. 75-GHz, 3-V dual-modulus divide-by-128/129 prescaler in 0. 7-micron CMOS," IEEE Journal of Solid-State Circuits, vol. 31, no. 7, pp. 890-897, July 1996.
6. K. Shu, E. Sanchez-Sinencio, J. Silva-Martinez, and S. H. K. Embabi, "A 2. 4-GHz monolithic fractional-N frequency synthesizer with robust phase-switching prescaler and loop capacitance multiplier," IEEE Journal of Solid-State Circuits, vol. 38, no. 6, pp. 866{874, June 2003.
7. Herzel, F. , G. Fischer, and H. Gustat, "An integrated CMOS RF synthesizer for 802. 11a wireless LAN," IEEE Journal of Solid-state Circuits, Vol. 38, No. 10, 1767–1770, Oct. 2003,
8. Theill, D. , C. Durdodt, A. Hanke, S. Heinen, S. van Waasen, D. Seippel, D. Pham-Stabner, and K. Schumacher, "A fully integrated CMOS frequency synthesizer for bluetooth," IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 103–106, Phoenix, Arizona, USA, May 20–22, 2001.
9. Foroudi, N. and T. A. Kwasniewski, "CMOS high-speed dualmodulus frequency divider for RF frequency synthesis," IEEE Journal of Solid-state Circuits, Vol. 30, No. 2, 93–100, Feb. 1995,
10. Sulaiman, M. S. and N. Khan, "A novel low-power high-speed programmable dual modulus divider for PLL-based frequency synthesizer," Proceedings of IEEE International Conference on Semiconductor Electronics, 2002, ICSE 2002, 77–81, Dec. 19–21,2002, . Assembled on a Single Carbon Nanotube," Science, vol. 311, no. 5768, p. 1735, March 2006
11. Appenzeller J et al (2008), "Carbon Nanotubes for High-Performance Electronics Progress and Prospect", Proceedings of the IEEE, Vol. 96, No. 2, pp. 201-211.
12. Kurt A. Moen et al (2010), "Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transientsin 45-nm SOI CMOS" IEEE Transactions on Nuclear Science, Vol. 57, No. 6, pp 3366 – 3372
13. Davide Ponton(2009) "Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm MOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices", IEEE Transactions on Circuits And Systems, Vol. 56, No. 5, pp 920 – 932.
14. Pecchia A et al. (2003), "Electronic Transport Properties of Molecular Devices", Physical Review Letters, Vol. 19,pp. 139-144.
15. Kyung Ki Kim,Yong-Bin Kim, Ken Choi (2011),"Hybrid CMOS and CNFET Power Gating in Ultralow Voltage Design" IEEE Transactions on Nanotechnology, Vol. 10, No. 6, Pp 1439-1448
16. Li J, Zhang Q, Yan Y et al. (2007), "Fabrication of Carbon Nanotube ield-Effect Transistors by Fluidic Alignment Technique", IEEE Transactions on Nano-Technology, Vol. 6, No. 4, pp. 481-484.
17. Bachtold A, Hadley P, Nakanishi T and Dekker (2001), "Logic Circuits with Carbon Nanotube Transistors", Science, Vol. 294, No. 9, pp. 1317-1320
18. Rahman A, Jing Guo, Datta S and Lundstrom M S (2003), "Theory of Ballistic Nanotransistors", IEEE Transactions on Electron Devices, Vol. 50, No. 10, pp. 1853-1864'
19. Raychowdhury A and Roy K (2005), "Carbon Nanotube-Based Voltage-Mode Multiple-Valued Logic Design", IEEE Trans. Nanotechnology, Vol. 4, No. 2, pp. 168-179.
20. Han J and Jonker P (2002), "A System Architecture Solution for Unreliable Nanoelectronic Devices", IEEE Trans. Nanotechnology, Vol. 1, pp. 201-208.
21. Ian O'Connor, Junchen Liu, etal (2007) "CNTFET Modeling and Reconfigurable Logic-Circuit Design" IEEE Transactions on Circuits and Systems, Vol. 54, No. 11, pp 2365-2379
22. Khairul Alam, Roger Lake,l (2007) "Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps" IEEE Transactions on Nanotechnology, Vol. 6,
23. Youngki Yoon, James Fodor, and Jing Guo, (2008) "A Computational Study of Vertical Partial-Gate Carbon-Nanotube FETs " IEEE Transactions on Electron Devices,Vol. 55, No. 1.
24. J. Liu, I. O'Connor, D. Navarro, F. Gaffiot (2007) "Design of a Novel CNTFET-based Reconfigurable Logic Gate" IEEE Computer Society Annual Symposium on VLSI(ISVLSI'07)
25. Jie Deng, H. -S. Philip Wong (2007) "A Compact SPICE Model for Carbon- Nanotube Field-Effect Transistors Including Nonidealities and Its Application Model of the Intrinsic Channel Region" IEEE Transactions on Electron Devices, Vol. 54, No. 12, Pp 3186-3194
26. Deji Akinwande, Yoshio Nishi,and H. -S. Philip Wong, (2008) " An Analytical Derivation of the Density of States, Effective Mass, and Carrier Density for Achiral Carbon Nanotubes" IEEE Transactions On Electron Devices, Vol. 55, No. 1, Pp 289 – 297
27. Jie Deng, H. -S. Philip Wong,(2007) "A Compact SPICE Model for Carbon- Nanotube Field-Effect Transistors Including Nonidealities and Its Application " IEEE Transactions On Electron Devices, Vol. 54, No. 12, Pp 3195 – 3205
28. Arijit Raychowdhury, Saibal Mukhopadhyay, andKaushik Roy (2004) "Circuit- Compatible Model of Ballistic Carbon Nanotube Field-Effect Transistors" IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 23, No. 10, pp 1411 – 1420.

Dual Modulus Prescalar Frequency Synthesizer Cntfet Cmos