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Comparative Analysis of Small Signal and Large Signal parameters in Heterostructure Field Effect Transistors
| National Conference on Structuring Innovation Through Quality SITQ 2013 |
| Foundation of Computer Science USA |
| SITQ - Number 1 |
| May 2013 |
| Authors: Birinderjit Singh Kalyan |
| 3e14b889-9221-4cd8-914a-2a7c20370968 |
Birinderjit Singh Kalyan . Comparative Analysis of Small Signal and Large Signal parameters in Heterostructure Field Effect Transistors. National Conference on Structuring Innovation Through Quality SITQ 2013. SITQ, 1 (May 2013), 4-7.
Abstract
Heterostructure field effect transistors (HFETs) are based on AlGaN/GaN heterostructures which offer excellent electronic properties for the development of faster, heat-resistant , energy efficient transistors and application in microwave-power amplifiers [1,2]. The outstanding device performance in cut-off frequency, breakdown voltage, and device output power [3,4]. However, the comparatively analysis of small signal and large signal parameters which are seldom found in this paper.
References
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