A CMOS radio frequency (RF) low noise amplifier (LNA) using high Q active inductor with binary code for multiband selecting is studied here. The high Q active inductor is connected to the common gate configuration to improve the gain and power consumption. The RF multiband amplifier operating at four different frequency bands has been realized. Simulation result shows the amplifier operates at 2400 MHz, 1900 MHz, 1800 MHz, 900 MHz with gain of 43. 946 dB, 43. 947 dB, 43. 948 dB and 43. 949 dB. The circuit shows power dissipation of 3. 053 mW with power supply voltage of 3. 3 V.

1. D. Linten, "Low-power 5GHz LNA and VCO in RF CMOS," IEEE Symposium on VLSI Circuits Digest of Technical Papers, pp. 372-375, 2004.
2. T. Antes and C. Conkling , "RF chip set fits multimode cellular/PCS handsets,"Microwave RF,pp. 177-186,1996
3. S. Wu and B. Razavi, " A 900-MHz/1. 8-GHz CMOS receiver for dual band applications," IEEE J. Solid-State circuits ,Vol. 33No. 12, pp. 2178-2185, 1998.
4. U. Yodpraist and J. Ngarmnil, "Q-Enhancement Technique for RF CMOS Active Inductor," IEEE ISCAS Circuits and systems, Vol . 5, pp. 589-592, 2000.
5. V. L. Belini and M. A. Romero, "Design of avtive inductor using CMOS Technology," IEEE Proceeding of the 15th Symposium on integrated Circuits abd Systems Design, pp. 296-30, 2002.
6. Y. Chang, J. Choma, and J. J. Wills, "A 900MHz Active Inductor LNA with A Band pass filter," SSMSD'99'SYMPOSIUM on Mixed-Signal Design, pp. 33-36,1999.
7. Jenn –Tzer Yang, Yuan-Hao Lee,Yi-Yuan Huang ,Yu-Min MU, and Yen-Ching Ho, "A 0. 18um CMOS Uing High-Q Active Inductors for Multi-band Low Noise Amplifier," IEEE Electronics Devices and Solid –State Circuits, pp. 1001-1004, Dec 2007.

Cmos High Q Active Inductor Low Noise Amplifier Multiband.