IPR, Future Technology, Optimization and Management |
Foundation of Computer Science USA |
NCIFTOM2016 - Number 1 |
April 2018 |
Authors: Priyanka Tyagi, Aakansha Garg |
9c0ff6c5-4a41-4a3c-8beb-4e766a53fbc4 |
Priyanka Tyagi, Aakansha Garg . Modelling of Compact Models of Carbon Nanotube Field Effect Transistors with VHDL-AMS. IPR, Future Technology, Optimization and Management. NCIFTOM2016, 1 (April 2018), 15-20.
This paper related to modelling and simulation of the carbon nanotube field effect transistor (CNTFET). There are two compact models for CNTFET's, the first which behaves like a MOSFET is known as the classical behaviour model and the other one is schottky barrier CNTFET is known as ambipolarbehaviourmodel . Like MOSFET devices these models implemented in VHDL-AMS. MOSFETs are modelled in VHDL which is a hardware description language and results are simulated on the simulators. CNTFET models are implemented on VHDL-AMS and have been compared with numerical simulation.