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TCAD Assessment of Oxide Impact on Linearity and Harmonic Distortions in Gate All Around (GAA) MOSFET
| International Conference on Microelectronic Circuit and System |
| Foundation of Computer Science USA |
| MICRO2017 - Number 1 |
| December 2018 |
| Authors: Akansha Goyal, Sonam Rewari, R. S. Gupta, Satvir Deswal |
Akansha Goyal, Sonam Rewari, R. S. Gupta, Satvir Deswal . TCAD Assessment of Oxide Impact on Linearity and Harmonic Distortions in Gate All Around (GAA) MOSFET. International Conference on Microelectronic Circuit and System. MICRO2017, 1 (December 2018), 37-42.
Abstract
In this paper for the first time the effect of different oxides namely Hafnium Oxide (HfO2), Silicon Oxide (SiO2) and air have been studied and analyzed for Gate All Around (GAA) MOSFET in context of linearity and harmonic distortions and high frequency operation. Various linearity metrics such as third order derivative of transconductance (gm3), VIP2, VIP3 and IIP3 have been studied and analyzed for GAA MOSFET using different dielectrics. We have also studied Maximum Transducer Power Gain (MTPG), Unilateral Power Gain (UPG), gate capacitance (CGG) and maximum cut off frequency (fTmax). Along with linearity metrics various analog metrics have been examined like drain currents (Ids), ON to OFF current ratio, transconductance and output conductance. Hafnium Oxide (HfO2) is more suitable for analog applications and air is more suitable as a dielectric for high linearity applications.
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