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Ultra Wideband Low Noise Amplifier Design and Optimization for Next Generation RF Receiver using 0.18mm CMOS

Published on December 2018 by Hasmukh P. Koringa, Vipul A. Shah
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International Conference on Microelectronic Circuit and System
Foundation of Computer Science USA
MICRO2017 - Number 1
December 2018
Authors: Hasmukh P. Koringa, Vipul A. Shah

Hasmukh P. Koringa, Vipul A. Shah . Ultra Wideband Low Noise Amplifier Design and Optimization for Next Generation RF Receiver using 0.18mm CMOS. International Conference on Microelectronic Circuit and System. MICRO2017, 1 (December 2018), 6-13.

@article{
author = { Hasmukh P. Koringa, Vipul A. Shah },
title = { Ultra Wideband Low Noise Amplifier Design and Optimization for Next Generation RF Receiver using 0.18mm CMOS },
journal = { International Conference on Microelectronic Circuit and System },
issue_date = { December 2018 },
volume = { MICRO2017 },
number = { 1 },
month = { December },
year = { 2018 },
issn = 0975-8887,
pages = { 6-13 },
numpages = 8,
url = { /proceedings/micro2017/number1/30176-1623/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Microelectronic Circuit and System
%A Hasmukh P. Koringa
%A Vipul A. Shah
%T Ultra Wideband Low Noise Amplifier Design and Optimization for Next Generation RF Receiver using 0.18mm CMOS
%J International Conference on Microelectronic Circuit and System
%@ 0975-8887
%V MICRO2017
%N 1
%P 6-13
%D 2018
%I International Journal of Computer Applications
Abstract

In 2002 Federal Communication Committee (FCC) has released an unlicensed 3. 1 - 10. 6 GHz Ultra Wideband (UWB) for commercial applications. The UWB technology has desirable features such as accurate timing in range resolution, less multi path fading, high data rate transmission and easier material penetration due to 7. 5 GHz wideband. The FCC has put restriction on transmission power (EIPR must less than -41. 3 dBm/MHz) and bandwidth (not less than 500 MHz) for UWB use in commercial applications. UWB receiver require high power gain, low noise figure and wideband matching due to FCC restriction on transmission power. The most critical part to design in UWB receiver is Low Noise Amplifier (LNA). The designing of LNA for UWB receiver is still challenging task. In this paper proposed multistage LNA topology for UWB receiver. The proposed LNA topology has Common Gate (CG) in first stage for wideband matching. The proposed LNA achieved more than 20 dB power gain, average 3. 3 dB noise figure and good input matching (S11<-9 dB) in wideband (3. 1 – 10. 6 GHz), while consuming total 19 mA current from 1. 8V supply including bias circuit current. The LNA design achieved good linearity, average IIP3 is -5. 5 dBm by proper biasing of the all amplifier stages. The standard 0. 18µm CMOS technology is used to design the LNA.

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Index Terms

Computer Science
Information Sciences

Keywords

Cmos Lna Next Generation Radio Frequency Frontend Uwb