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Parametric Variation with Doping Concentration in a FinFET using 3D TCAD

Published on October 2014 by Keerti Kumar K, Anil P, Bheema Rao N
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International Conference on Microelectronics, Circuits and Systems
Foundation of Computer Science USA
MICRO - Number 3
October 2014
Authors: Keerti Kumar K, Anil P, Bheema Rao N
bc655777-2cf7-49b2-8d07-9805a436d7d4

Keerti Kumar K, Anil P, Bheema Rao N . Parametric Variation with Doping Concentration in a FinFET using 3D TCAD. International Conference on Microelectronics, Circuits and Systems. MICRO, 3 (October 2014), 21-23.

@article{
author = { Keerti Kumar K, Anil P, Bheema Rao N },
title = { Parametric Variation with Doping Concentration in a FinFET using 3D TCAD },
journal = { International Conference on Microelectronics, Circuits and Systems },
issue_date = { October 2014 },
volume = { MICRO },
number = { 3 },
month = { October },
year = { 2014 },
issn = 0975-8887,
pages = { 21-23 },
numpages = 3,
url = { /proceedings/micro/number3/18327-1825/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Microelectronics, Circuits and Systems
%A Keerti Kumar K
%A Anil P
%A Bheema Rao N
%T Parametric Variation with Doping Concentration in a FinFET using 3D TCAD
%J International Conference on Microelectronics, Circuits and Systems
%@ 0975-8887
%V MICRO
%N 3
%P 21-23
%D 2014
%I International Journal of Computer Applications
Abstract

The parametric variations of FinFET in 22 nm due to doping concentrations are presented. In this paper different parameters of FinFET such as subthreshold slope, DIBL, threshold voltage, transconductance and Ioff are analysed using Synopsys Sentaurus 3D TCAD. From the results, it can be concluded that, optimized doping leads to better characteristics for the FinFET.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Subthreshold Slope Dibl Transconductance Ioff Doping Concentration Finfet.