We propose a new lateral power metal-oxide semiconductor field-effect transistor (MOSFET) on InGaAs. The proposed structure is obtained by incorporating two trenches in the drift region of a standard power MOSFET structure. The modified device design provides reduction in electric field in the drift region leading to significant improvement in the device performance in terms of breakdown voltage and figure-of merit. Two-dimensional numerical simulations are used to evaluate and compare the performance of new device with that of the standard MOSFET for identical cell pitch, gate length and drift region doping. Our simulation results show that the proposed device can provide 3. 2 time's higher breakdown voltage and 3. 8 times improvement in figure-of-merit over the conventional device.

1. F. Ellinger, "Radio frequency integrated circuits and technologies," Springer, Berlin Heidelberg, pp. 113–194, 2008.
2. F. Schwier and J. J. Liou, "RF transistors: recent developments and roadmap toward terahertz applications," Solid-State Electron. , vol. 51, pp. 1079–1091, 2007.
3. M. Hong and J. L. Kwo, "InGaAs, Ge, and GaN metal-oxide-semiconductor devices with high-K dielectrics for science and technology beyond si cmos. In: Oktyabrsky, s. , ye, p. (eds. ) fundamentals of iii-v semiconductor mosfets," Springer, New York. pp. 251–285, 2010.
4. S. Narayanan, C. Sachs, and M. Fischetti, "Study of performance and leakage currents in nanometer-scale bulk, SOI and double-gate MOSFETs," J. Comput. Electron. , vol. 7, pp. 24–27, 2008.
5. J. B. Steighner, J. S. Yuan, and Y. Liu, "Simulation and analysis of InGaAs power MOSFET performances and reliability," IEEE Trans. Electron Devices, vol. 58, pp. 180–189, 2011.
6. Y. Singh and M. S. Adhikari, "Performance evaluation of a lateral trench-gate power MOSFET on InGaAs," Springer, New York, Aug 2013.
7. "Atlas user's manual," Device Simulation Software, Silvaco Int. , Santa Clara, 2010.

Mosfet Ingaas Lateral Trench-gate Figure Of Merit.