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Design and Simulation of SR, D and T Flip- Flops modeled with Single Electron Devices

Published on None 2011 by P.C.Pradhan, Kushal Pokhrel, S K Sarkar, Amit Agarwal, Sharmistha Chetia
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International Symposium on Devices MEMS, Intelligent Systems & Communication
Foundation of Computer Science USA
ISDMISC - Number 3
None 2011
Authors: P.C.Pradhan, Kushal Pokhrel, S K Sarkar, Amit Agarwal, Sharmistha Chetia
434af14d-1e09-4f20-8a61-9fcfb329db2f

P.C.Pradhan, Kushal Pokhrel, S K Sarkar, Amit Agarwal, Sharmistha Chetia . Design and Simulation of SR, D and T Flip- Flops modeled with Single Electron Devices. International Symposium on Devices MEMS, Intelligent Systems & Communication. ISDMISC, 3 (None 2011), 16-21.

@article{
author = { P.C.Pradhan, Kushal Pokhrel, S K Sarkar, Amit Agarwal, Sharmistha Chetia },
title = { Design and Simulation of SR, D and T Flip- Flops modeled with Single Electron Devices },
journal = { International Symposium on Devices MEMS, Intelligent Systems & Communication },
issue_date = { None 2011 },
volume = { ISDMISC },
number = { 3 },
month = { None },
year = { 2011 },
issn = 0975-8887,
pages = { 16-21 },
numpages = 6,
url = { /proceedings/isdmisc/number3/3456-isdm051/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Symposium on Devices MEMS, Intelligent Systems & Communication
%A P.C.Pradhan
%A Kushal Pokhrel
%A S K Sarkar
%A Amit Agarwal
%A Sharmistha Chetia
%T Design and Simulation of SR, D and T Flip- Flops modeled with Single Electron Devices
%J International Symposium on Devices MEMS, Intelligent Systems & Communication
%@ 0975-8887
%V ISDMISC
%N 3
%P 16-21
%D 2011
%I International Journal of Computer Applications
Abstract

The inspiring aspect of SET technology is that it offers control over the movement of one individual electron in the SEC (single electron circuits). In this paper we present SET (single electron tunneling) gate based implementations of SR flip-flop, D flip-flop and T-flip-flops. The whole design and simulation is made using a Monte- Carlo based tool. We propose gate based design of these SECs and verify simulation results using Monte Carlo Simulator (SIMON 2.0). The operation of the basic flip flops is successfully demonstrated through SIMON circuit simulation.

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Index Terms

Computer Science
Information Sciences

Keywords

Coulomb Blockade Single Electron Transistor SET tunneling Quantum Dot Tunneling Rate SR flip flop D flip flop and T flip flop SIMON