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Reseach Article

Ultra Low Power 1-Bit Full Adder

Published on None 2011 by Deepa Sinha, Tripti Sharma, K. G. Sharma, Prof. B. P. Singh
International Symposium on Devices MEMS, Intelligent Systems & Communication
Foundation of Computer Science USA
ISDMISC - Number 1
None 2011
Authors: Deepa Sinha, Tripti Sharma, K. G. Sharma, Prof. B. P. Singh
d4408ba7-ab44-4719-9b87-18ecd9533b81

Deepa Sinha, Tripti Sharma, K. G. Sharma, Prof. B. P. Singh . Ultra Low Power 1-Bit Full Adder. International Symposium on Devices MEMS, Intelligent Systems & Communication. ISDMISC, 1 (None 2011), 9-11.

@article{
author = { Deepa Sinha, Tripti Sharma, K. G. Sharma, Prof. B. P. Singh },
title = { Ultra Low Power 1-Bit Full Adder },
journal = { International Symposium on Devices MEMS, Intelligent Systems & Communication },
issue_date = { None 2011 },
volume = { ISDMISC },
number = { 1 },
month = { None },
year = { 2011 },
issn = 0975-8887,
pages = { 9-11 },
numpages = 3,
url = { /proceedings/isdmisc/number1/3439-isdm117/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Symposium on Devices MEMS, Intelligent Systems & Communication
%A Deepa Sinha
%A Tripti Sharma
%A K. G. Sharma
%A Prof. B. P. Singh
%T Ultra Low Power 1-Bit Full Adder
%J International Symposium on Devices MEMS, Intelligent Systems & Communication
%@ 0975-8887
%V ISDMISC
%N 1
%P 9-11
%D 2011
%I International Journal of Computer Applications
Abstract

In this paper we propose a new 9 transistor 1-bit full adder. The proposed circuit performs efficiently in subthreshold region to employ in ultra low power applications. The main design objective for this new circuit is low power consumption and full voltage swing at a low supply voltage. The proposed cell also remarkably improves the power consumption, power delay product and has better noise immunity when compared to the existing deigns. All simulations are performed on 45nm standard models on Tanned EDA tool version 12.6.

References
  1. Taur, Y, and Ning, T. H. 1998. Fundamentals of modern VLSI devices. Cambridge university press, New York.
  2. Chandrakasan, A. P et.al. April 1992. Low power CMOS digital design. in IEEE Jl. Of solid state circuits, vol. 27, pp. 473-484.
  3. Kim, C. H. and Roy, K. 2002. Dynamic VTH scaling schema for active leakage power reducing in Proceedings of Design Automation and Test in European Conference and Exhibition, pp.163 – 167.
  4. Chowdhury, S. R. Banerjee, A. Roy, A. Saha, H. 2008. A high speed 8 transistor full adder design using novel 3 transistor XOR gates in International Journal of Electronics, Circuits and Systems 2, 217
  5. Sharma, T. Sharma, K. G. Singh, B. P. 2010. Energy Efficient 1-bit Full Adder Cell with 45% Reduced Threshold Loss in International Journal of Recent Trends in Engineering, Vol 3, pp. 106-110.
  6. Sharma, T. Sharma, K. G. Singh, B. P. 2010. High Performance Full Adder Cell: A Comparative Analysis. 2010 IEEE Student’s Technology Symposium IIT Kharagpur.
  7. Wang, A. Calhoun, B. H. and Chandrakasan, A. 2005. Sub-threshold design for ultra low-power systems. Springer publishers.
Index Terms

Computer Science
Information Sciences

Keywords

Subthreshold region full adder low power