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Reseach Article

TCAD Simulation of Tunnel Field Effect Transistor

Published on February 2017 by Rockey Bhardwaj, Gurinderpal Singh
National Conference on Latest Initiatives and Innovations in Communication and Electronics
Foundation of Computer Science USA
IICE2016 - Number 1
February 2017
Authors: Rockey Bhardwaj, Gurinderpal Singh
9c2bfe06-bd1b-4dc6-af1e-315077731e87

Rockey Bhardwaj, Gurinderpal Singh . TCAD Simulation of Tunnel Field Effect Transistor. National Conference on Latest Initiatives and Innovations in Communication and Electronics. IICE2016, 1 (February 2017), 14-17.

@article{
author = { Rockey Bhardwaj, Gurinderpal Singh },
title = { TCAD Simulation of Tunnel Field Effect Transistor },
journal = { National Conference on Latest Initiatives and Innovations in Communication and Electronics },
issue_date = { February 2017 },
volume = { IICE2016 },
number = { 1 },
month = { February },
year = { 2017 },
issn = 0975-8887,
pages = { 14-17 },
numpages = 4,
url = { /proceedings/iice2016/number1/26949-1661/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 National Conference on Latest Initiatives and Innovations in Communication and Electronics
%A Rockey Bhardwaj
%A Gurinderpal Singh
%T TCAD Simulation of Tunnel Field Effect Transistor
%J National Conference on Latest Initiatives and Innovations in Communication and Electronics
%@ 0975-8887
%V IICE2016
%N 1
%P 14-17
%D 2017
%I International Journal of Computer Applications
Abstract

It is observed that there are two limitations with conventional MOSFET, especially Sub threshold swings and high Ioff current. Subthreshold has minimum value of 60 mV/decade [1]. But we cannot get lower sub-threshold swing than this value with conventional MOSFET. These limitations are overcome by Tunnel Field effect transistors (TFET). TFET is working on tunneling effect, which requires less input voltages to decrease band gap due to presence of p-i-n region. Also there are very low OFF- current in TFET and hence low power consumption. The TFET works on band-to-band tunneling (BTBT) principle. In this paper, principle operation of TFET has been studied, and then simulation of the TFET using Sentaurus TCAD software.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Band To Band Tunneling Tfet Tunnel Field Effect Transistor Low Voltage Operating Transistor.