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Current Model for short channel Illuminated Gallium Nitride HEMT
| International Conference and Workshop on Emerging Trends in Technology |
| Foundation of Computer Science USA |
| ICWET - Number 11 |
| None 2011 |
| Authors: B.K. Mishra, Lochan Jolly, Sonia Behra |
| e3cc15e0-46c4-44f4-88a5-9afd3aa8a660 |
B.K. Mishra, Lochan Jolly, Sonia Behra . Current Model for short channel Illuminated Gallium Nitride HEMT. International Conference and Workshop on Emerging Trends in Technology. ICWET, 11 (None 2011), 7-12.
Abstract
Microwave power transistors play key role in today’s wireless communication, necessary for virtually all major aspects of human activities from entertainment, business to military. HEMT is widely used due to its high speed and power amplification capabilities. The paper proposes a current Model for short channel HEMT to evaluate its sensitivity to illumination to find its application in optical monolithic microwave integrated circuits(OMMIC).
References
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