International Conference on VLSI, Communication & Instrumentation |
Foundation of Computer Science USA |
ICVCI - Number 18 |
None 2011 |
Authors: Manijeh Alizadeh, Behjat Forouzandeh, Reza Sabbaghi-nadooshan |
e4b0bb34-aacf-49b3-a006-44dfbda650e2 |
Manijeh Alizadeh, Behjat Forouzandeh, Reza Sabbaghi-nadooshan . Simulation and Design of Two Full Adder Cells in Subthreshold Region by Various CMOS Technologies and Compare Together. International Conference on VLSI, Communication & Instrumentation. ICVCI, 18 (None 2011), 6-11.
This paper presents two new 1-bit full adder cells operating in subthreshold region with 65nm, 90nm and 0.18um technologies. Circuits designed in this region usually consume less power. Inverse Majority Gate (IMG) together with NAND/NOR were used as the main computational building blocks. A modification was done to optimize W/L ratios with different supply voltages. We used W/L ratios for all the PMOS transistors 1.5 times the ratio of W/L for all NMOS transistors. Compared with a previously reported minority-3 based full adder; the results involve better performance in terms of power, delay, and PDP.