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Reseach Article

Simulation and Design of Two Full Adder Cells in Subthreshold Region by Various CMOS Technologies and Compare Together

Published on None 2011 by Manijeh Alizadeh, Behjat Forouzandeh, Reza Sabbaghi-nadooshan
International Conference on VLSI, Communication & Instrumentation
Foundation of Computer Science USA
ICVCI - Number 18
None 2011
Authors: Manijeh Alizadeh, Behjat Forouzandeh, Reza Sabbaghi-nadooshan
e4b0bb34-aacf-49b3-a006-44dfbda650e2

Manijeh Alizadeh, Behjat Forouzandeh, Reza Sabbaghi-nadooshan . Simulation and Design of Two Full Adder Cells in Subthreshold Region by Various CMOS Technologies and Compare Together. International Conference on VLSI, Communication & Instrumentation. ICVCI, 18 (None 2011), 6-11.

@article{
author = { Manijeh Alizadeh, Behjat Forouzandeh, Reza Sabbaghi-nadooshan },
title = { Simulation and Design of Two Full Adder Cells in Subthreshold Region by Various CMOS Technologies and Compare Together },
journal = { International Conference on VLSI, Communication & Instrumentation },
issue_date = { None 2011 },
volume = { ICVCI },
number = { 18 },
month = { None },
year = { 2011 },
issn = 0975-8887,
pages = { 6-11 },
numpages = 6,
url = { /proceedings/icvci/number18/2763-1662/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on VLSI, Communication & Instrumentation
%A Manijeh Alizadeh
%A Behjat Forouzandeh
%A Reza Sabbaghi-nadooshan
%T Simulation and Design of Two Full Adder Cells in Subthreshold Region by Various CMOS Technologies and Compare Together
%J International Conference on VLSI, Communication & Instrumentation
%@ 0975-8887
%V ICVCI
%N 18
%P 6-11
%D 2011
%I International Journal of Computer Applications
Abstract

This paper presents two new 1-bit full adder cells operating in subthreshold region with 65nm, 90nm and 0.18um technologies. Circuits designed in this region usually consume less power. Inverse Majority Gate (IMG) together with NAND/NOR were used as the main computational building blocks. A modification was done to optimize W/L ratios with different supply voltages. We used W/L ratios for all the PMOS transistors 1.5 times the ratio of W/L for all NMOS transistors. Compared with a previously reported minority-3 based full adder; the results involve better performance in terms of power, delay, and PDP.

References
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Index Terms

Computer Science
Information Sciences

Keywords

VLSI Subthreshold full adder inverse majority gate