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A Physics based Mosfet Noise Model for Nanoscale Applications

Published on December 2013 by P. Suveetha Dhanaselvam, N. B. Balamurugan, V. Lourdy Nivethitha, S. Saranya, V. Prathibha
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International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
Foundation of Computer Science USA
ICIIIOES - Number 7
December 2013
Authors: P. Suveetha Dhanaselvam, N. B. Balamurugan, V. Lourdy Nivethitha, S. Saranya, V. Prathibha
3aeeed6b-49b0-4828-82a8-e7d042f0a6e0

P. Suveetha Dhanaselvam, N. B. Balamurugan, V. Lourdy Nivethitha, S. Saranya, V. Prathibha . A Physics based Mosfet Noise Model for Nanoscale Applications. International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences. ICIIIOES, 7 (December 2013), 6-9.

@article{
author = { P. Suveetha Dhanaselvam, N. B. Balamurugan, V. Lourdy Nivethitha, S. Saranya, V. Prathibha },
title = { A Physics based Mosfet Noise Model for Nanoscale Applications },
journal = { International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences },
issue_date = { December 2013 },
volume = { ICIIIOES },
number = { 7 },
month = { December },
year = { 2013 },
issn = 0975-8887,
pages = { 6-9 },
numpages = 4,
url = { /proceedings/iciiioes/number7/14326-1593/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
%A P. Suveetha Dhanaselvam
%A N. B. Balamurugan
%A V. Lourdy Nivethitha
%A S. Saranya
%A V. Prathibha
%T A Physics based Mosfet Noise Model for Nanoscale Applications
%J International Conference on Innovations In Intelligent Instrumentation, Optimization and Electrical Sciences
%@ 0975-8887
%V ICIIIOES
%N 7
%P 6-9
%D 2013
%I International Journal of Computer Applications
Abstract

Recently MOSFET has been considered as an important aspirant in the field of VLSI technology since it minimizes short-channel effect. FinFETs are promising substitute for CMOS at the nanoscale for meeting the challenges being posed by the scaling of conventional MOSFET. Continuous scaling of technologies towards the nanometer range will severely enhance noise implication. In this paper, a physics based MOSFET noise model that can accurately predict the noise characteristics over all the three operating regions known as subthreshold region, weak inversion region and strong inversion region is proposed . The physics based expressions for thermal noise has been derived and experimentally verified with corresponding graphs by using MATLAB simulation.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Finfet Sce Mosfet Thermal Noise.