CFP last date
20 January 2025
Reseach Article

Impact of Fin Shape on Fin FET Performance

Published on September 2015 by Jyothi A, Nishakuruvilla, T E Ayoob Khan, Shahul Hameed T A
International Conference on Emerging Trends in Technology and Applied Sciences
Foundation of Computer Science USA
ICETTAS2015 - Number 2
September 2015
Authors: Jyothi A, Nishakuruvilla, T E Ayoob Khan, Shahul Hameed T A
51f7b291-4820-4cc5-9153-da385a6c8087

Jyothi A, Nishakuruvilla, T E Ayoob Khan, Shahul Hameed T A . Impact of Fin Shape on Fin FET Performance. International Conference on Emerging Trends in Technology and Applied Sciences. ICETTAS2015, 2 (September 2015), 1-4.

@article{
author = { Jyothi A, Nishakuruvilla, T E Ayoob Khan, Shahul Hameed T A },
title = { Impact of Fin Shape on Fin FET Performance },
journal = { International Conference on Emerging Trends in Technology and Applied Sciences },
issue_date = { September 2015 },
volume = { ICETTAS2015 },
number = { 2 },
month = { September },
year = { 2015 },
issn = 0975-8887,
pages = { 1-4 },
numpages = 4,
url = { /proceedings/icettas2015/number2/22378-2572/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Emerging Trends in Technology and Applied Sciences
%A Jyothi A
%A Nishakuruvilla
%A T E Ayoob Khan
%A Shahul Hameed T A
%T Impact of Fin Shape on Fin FET Performance
%J International Conference on Emerging Trends in Technology and Applied Sciences
%@ 0975-8887
%V ICETTAS2015
%N 2
%P 1-4
%D 2015
%I International Journal of Computer Applications
Abstract

FinFET has been a proven modification of the classical structure of MOSFETs to overcome short channel effect. But the leakage current due to corner effect in trigate FinFET posed impediments in its way. Fin cross section shape of FinFET has considerable impact on leakage performance. In this paper trapezium and inverse trapezium PC FinFETs with various top and bottom width of fin are studied. Results show that rounding the corner and tapering the fin reduce the leakage and improves Ion/Ioff ratio.

References
  1. S. Cristoloveanu"How Many Gates Do We Need in A Transistor: One, Two, Three or Four??" Romanian Journal of informationscience and technology, Volume 11, Number 1, 2008, 17-28
  2. D. Hisamoto, W. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T. King, J. Bokor, and C. Hu, "FinFET—A self-aligned double-gate MOSFET scalable to 20 nm," IEEE Trans. Electron Devices,vol. 47, no. 12, pp. 2320–2325, Dec. 2000.
  3. Mayur Bhole, Aditya Kurude, Sagar Pawar "FinFET-Benefits, Drawbacks and Challenges" International Journal Of Engineering Sciences and Research Technology,pp. 3219-3222,November 2013
  4. A. N. Moulai Khatira, A. Bouazzaa, B. Bouazza" Corner effects sensitivity to Fin geometry variations in Tri-gate SOI-FinFET"Journal of Electron Devices, Vol. 18, 2013, pp. 1549-1552
  5. Sanjeev Rai, Jyotsna Sahu, Wanjul Dattatray, R. A. Mishra, and Sudarshan Ti-wari "Modelling, Design, and Performance Comparison of Triple Gate Cylindrical and Partially Cylindrical FinFETs for Low-Power Applications"International Scholarly Research Network ISRN Electronics, Article ID 827452, 7 pages,doi:10. 5402/2012/827452
  6. Brad D. Gaynor and Soha Hassoun, Senior Member, IEEE, "Fin Shape Impact on FinFET Leakage With Application to Multithreshold and Ultralow-Leakage FinFET Design" IEEE transactions on electron devices, vol. 61, no. 8,pp. 2738-2744 august 2014
  7. Y. Li and C. -H. Hwang, "Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs," IEEE Trans. Electron Devices, vol. 54, no. 12, pp. 3426–3429, Dec. 2007.
  8. R. Giacomini and J. A. Martino,"Trapezoidal cross-sectional infiuence on FinFET threshold voltage and corner effects,"J. Electrochem. Soc. , vol. 155, no. 4, pp. H213-H217, 2008.
  9. Suman Lata Tripathi and R. A. Mishra,"Design of 20 nm FinFET structure with round n corners using side surfaceslopevariation",Journal of Electron Devices,Vol. 18, 2013
  10. Rudolf Theoderich Bühler,, Renato Giacomini1, Marcelo Antonio Pavanello1and João Antonio Martino"Fin Cross-Section Shape Influence on Short Channel Effects of MuGFETs"Journal Integrated Circuits and Systems 2012; v. 7 / n. 1:137-144
  11. P. Magnone, A. Mercha, V. Subramanian, P. Parvais, N. Collaert, M. Dehan, S. Decoutere,G. Groeseneken, J. Benson, T. Merelle, R. J. P. Lander, F. Crupi, and C. Pace"Matching Performance of FinFET Devices With Fin Widths Down to 10 nm"IEEE electron device letters, vol. 30, no. 12, December 2009,pp. 1374-1376
  12. M. Poljak, V. Jovanovi´c, and T. Suligoj, "Suppression ofcorner effects in wide-channel triple-gate bulk FinFETs,"Microelectronic Engineering, vol. 87, no. 2, pp. 192–199, 2010
Index Terms

Computer Science
Information Sciences

Keywords

Pc-finfet Corner Effect Multithreshold