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Growth, Structural and Dielectric Properties of Gallium doped Potassium Dihydrogen Phosphate (KDP) Single Crystal by Shankarnarayan �Ramasamy Method

Published on October 2012 by N. S. Meshram, N. M. Gahane, R. N. Kakde, V. D. Maske, B. A. Shingade, K. G. Rewatkar, V. M. Nanoti
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International Conference on Benchmarks in Engineering Science and Technology 2012
Foundation of Computer Science USA
ICBEST - Number 3
October 2012
Authors: N. S. Meshram, N. M. Gahane, R. N. Kakde, V. D. Maske, B. A. Shingade, K. G. Rewatkar, V. M. Nanoti
6a15bc41-e273-480b-9c6d-9a6fa13e6f6b

N. S. Meshram, N. M. Gahane, R. N. Kakde, V. D. Maske, B. A. Shingade, K. G. Rewatkar, V. M. Nanoti . Growth, Structural and Dielectric Properties of Gallium doped Potassium Dihydrogen Phosphate (KDP) Single Crystal by Shankarnarayan �Ramasamy Method. International Conference on Benchmarks in Engineering Science and Technology 2012. ICBEST, 3 (October 2012), 26-28.

@article{
author = { N. S. Meshram, N. M. Gahane, R. N. Kakde, V. D. Maske, B. A. Shingade, K. G. Rewatkar, V. M. Nanoti },
title = { Growth, Structural and Dielectric Properties of Gallium doped Potassium Dihydrogen Phosphate (KDP) Single Crystal by Shankarnarayan �Ramasamy Method },
journal = { International Conference on Benchmarks in Engineering Science and Technology 2012 },
issue_date = { October 2012 },
volume = { ICBEST },
number = { 3 },
month = { October },
year = { 2012 },
issn = 0975-8887,
pages = { 26-28 },
numpages = 3,
url = { /proceedings/icbest/number3/8706-1040/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Benchmarks in Engineering Science and Technology 2012
%A N. S. Meshram
%A N. M. Gahane
%A R. N. Kakde
%A V. D. Maske
%A B. A. Shingade
%A K. G. Rewatkar
%A V. M. Nanoti
%T Growth, Structural and Dielectric Properties of Gallium doped Potassium Dihydrogen Phosphate (KDP) Single Crystal by Shankarnarayan �Ramasamy Method
%J International Conference on Benchmarks in Engineering Science and Technology 2012
%@ 0975-8887
%V ICBEST
%N 3
%P 26-28
%D 2012
%I International Journal of Computer Applications
Abstract

Gallium doped Potassium Dihydrogen Phosphate (KDP) single crystals are grown by Shankarnarayan –Ramasamy growth technique. Slow cooling method was adapted for the growth with variation in doping concentration, there is modification in growth habit, non linear optical properties of doped crystals. Powder XRD determines the parameters of unit cell of doped KDP crystals. EDAX study shows presence of gallium ion in appropriate sites in unit cell. The Fourier Transform Infra Red (FTIR) spectrum reveals strong absorption bands due to gallium 3+ ion. UV spectra show improvement in optical transmittance. TGA –DTA determines the composition of materials and to predict their thermal stability at temperatures.

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Index Terms

Computer Science
Information Sciences

Keywords

Kdp Solution Growth Xrd Ft-ir Edax uv-vis Tga –dta