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Structural and Optical Properties of ZnS Thin Films Deposited by Spray Pyrolysis Technique

Published on October 2012 by R S Meshram, R M Thombre
journal_cover_thumbnail

International Conference on Benchmarks in Engineering Science and Technology 2012
Foundation of Computer Science USA
ICBEST - Number 3
October 2012
Authors: R S Meshram, R M Thombre
efaee0d6-006b-4c2c-aede-b76f816ec867

R S Meshram, R M Thombre . Structural and Optical Properties of ZnS Thin Films Deposited by Spray Pyrolysis Technique. International Conference on Benchmarks in Engineering Science and Technology 2012. ICBEST, 3 (October 2012), 22-25.

@article{
author = { R S Meshram, R M Thombre },
title = { Structural and Optical Properties of ZnS Thin Films Deposited by Spray Pyrolysis Technique },
journal = { International Conference on Benchmarks in Engineering Science and Technology 2012 },
issue_date = { October 2012 },
volume = { ICBEST },
number = { 3 },
month = { October },
year = { 2012 },
issn = 0975-8887,
pages = { 22-25 },
numpages = 4,
url = { /proceedings/icbest/number3/8705-1039/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Benchmarks in Engineering Science and Technology 2012
%A R S Meshram
%A R M Thombre
%T Structural and Optical Properties of ZnS Thin Films Deposited by Spray Pyrolysis Technique
%J International Conference on Benchmarks in Engineering Science and Technology 2012
%@ 0975-8887
%V ICBEST
%N 3
%P 22-25
%D 2012
%I International Journal of Computer Applications
Abstract

The II-VI group semiconductors are of great importance due to their applications in various opto electronic devices. Among these semiconductor. Zinc sulphide is the most suitable for its utility in opto electronic devices. Zinc Sulphide has been prepared on glass substrate by using Spray Pyrolysis method. The optical properties of these films have been studied in the wavelength range 380-1000-nm using UV-VIS spectro-photometer. The ZnS films has a direct band gap of 3. 47eV-3. 54eV. The thickness of these films were determined by weighing method and in the range of 0. 2120µm - 0. 2543. µm The structure of the prepared films was studied from X-ray diffraction pattern, the results shows that the film was polycrystalline with hexagonal structure.

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Index Terms

Computer Science
Information Sciences

Keywords

Zns Thin Films Xrd Sem