International Conference on Benchmarks in Engineering Science and Technology 2012 |
Foundation of Computer Science USA |
ICBEST - Number 3 |
October 2012 |
Authors: Yogesh S. Sakhare, Monali V. Bhute, Milind R. Belkhedkar, S. G. Ibrahim, Ashok U. Ubale |
e4be2c6b-e240-4d06-9592-d8740af22d0f |
Yogesh S. Sakhare, Monali V. Bhute, Milind R. Belkhedkar, S. G. Ibrahim, Ashok U. Ubale . Physical Properties of Nanostructured Fese Thin Films Deposited by Chemical Bath Deposition Techniques: Effect of Fe(NO3)3.9H2O Source. International Conference on Benchmarks in Engineering Science and Technology 2012. ICBEST, 3 (October 2012), 11-14.
The simple, economic and convenient chemical bath deposition technique is utilized to grow nanostructured FeSe thin films at room temperature. The effect of Fe ion source, Fe (NO3)3. 9H20 on growth process of FeSe thin films is discussed. The X-ray diffraction study revealed that the CBD deposited FeSe thin films are polycrystalline in nature with hexagonal type lattice. The morphological investigations carried from SEM and AFM analysis shows that FeSe grains are uniformly distributed over the entire substrate surface. The electrical resistivity of FeSe films is of the order of 104?-cm. The thermo-emf measurements confirms its P-type conductivity.