We apologize for a recent technical issue with our email system, which temporarily affected account activations. Accounts have now been activated. Authors may proceed with paper submissions. PhDFocusTM
CFP last date
20 December 2024
Reseach Article

Design and Implementation of Mosfet Model Equations on MATLAB Simulink Library

Published on September 2016 by Nishant Goyal, Sushil Kakkar, Shweta Rani
International Conference on Advances in Emerging Technology
Foundation of Computer Science USA
ICAET2016 - Number 1
September 2016
Authors: Nishant Goyal, Sushil Kakkar, Shweta Rani
d7f16b4e-6428-4893-8358-3760e4e7a03a

Nishant Goyal, Sushil Kakkar, Shweta Rani . Design and Implementation of Mosfet Model Equations on MATLAB Simulink Library. International Conference on Advances in Emerging Technology. ICAET2016, 1 (September 2016), 25-31.

@article{
author = { Nishant Goyal, Sushil Kakkar, Shweta Rani },
title = { Design and Implementation of Mosfet Model Equations on MATLAB Simulink Library },
journal = { International Conference on Advances in Emerging Technology },
issue_date = { September 2016 },
volume = { ICAET2016 },
number = { 1 },
month = { September },
year = { 2016 },
issn = 0975-8887,
pages = { 25-31 },
numpages = 7,
url = { /proceedings/icaet2016/number1/25881-t030/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Advances in Emerging Technology
%A Nishant Goyal
%A Sushil Kakkar
%A Shweta Rani
%T Design and Implementation of Mosfet Model Equations on MATLAB Simulink Library
%J International Conference on Advances in Emerging Technology
%@ 0975-8887
%V ICAET2016
%N 1
%P 25-31
%D 2016
%I International Journal of Computer Applications
Abstract

The Complexity and Simulation time of MOSFET equations are major problems in VLSI applications and these problems should be resolved using different methods which are capable to conquer these limitations. The method of block designing for all the MOSFET equations like current, voltage, capacitance characteristics, flat band capacitance, threshold voltage, oxide capacitance etc. , can be a better solution for this problem. This methodology provides a simple procedure for handling complex VLSI circuit, because every parameter present in MOSFET has their individual equation and it may not be an easy task to memorize each equation at all time. Blocks provide an easy and simple way for many operations like scaling, reduction of multipart circuits, error free, and reduction of time. This paper determines the controllability and observability in MATLAB/Simulink, which is an easy way for handling complex MOSFET equations. The methodologies for implementation of different equations of MOSFET that are based on VLSI applications have been designed on the MATLAB Simulink.

References
  1. Arora, Narain. Mosfet modeling for VLSI simulation: theory and practice. World Scientific, 2007.
  2. Joardar, Kuntal, Kiran Kumar Gullapalli, Colin C. McAndrew, Marie Elizabeth Burnham, and Andreas Wild. "An improved MOSFET model for circuit simulation. " IEEE transactions on Electron devices 45, no. 1 (1998): 134-148.
  3. Singh, Gurinder Pal. "Simulink model for Controllability and Observability of VLSI Circuits. " Journal of Global Research in Computer Science 1, no. 3 (2010).
  4. Mishra, Umesh, and Jasprit Singh. Semiconductor device physics and design. Springer Science & Business Media, 2007.
  5. Dunga, Mohan V. , Chung-Hsun Lin, Xuemei Xi, Darsen D. Lu, Ali M. Niknejad, and Chenming Hu. "Modeling advanced FET technology in a compact model. " Electron Devices, IEEE Transactions on 53, no. 9 (2006): 1971-1978.
  6. Siligaris, Alexandre, Gilles Dambrine, Dominique Schreurs, and François Danneville. "A new empirical nonlinear model for sub-250 nm channel MOSFET. " Microwave and Wireless Components Letters, IEEE 13, no. 10 (2003): 449-451.
  7. Bernard-Granger, Guillaume, Amandine Néri, Christelle Navone, Mathieu Soulier, Julia Simon, and Maya Marinova-Atanassova. "Spark plasma sintering of a p-type Si1? x Ge x alloy: identification of the densification mechanism by isothermal and anisothermal methods. " Journal of Materials Science 47, no. 10 (2012): 4313-4325.
  8. Singh, Gurinder Pal, and Balwinder Singh. "Simulink Library Development and Implementation for VLSI Testing in Matlab. " In High Performance Architecture and Grid Computing, pp. 233-240. Springer Berlin Heidelberg, 2011.
  9. Cheng, Yuhua, Min-Chie Jeng, Zhihong Liu, Jianhui Huang, Mansun Chan, Kai Chen, Ping Keung Ko, and Chenming Hu. "A physical and scalable IV model in BSIM3v3 for analog/digital circuit simulation. " Electron Devices, IEEE Transactions on 44, no. 2 (1997): 277-287.
  10. Pailloncy, Guillaume, Christine Raynaud, M. Vanmackelberg, François Danneville, S. Lepilliet, Jean-Pierre Raskin, and Gilles Dambrine. "Impact of downscaling on high-frequency noise performance of bulk and SOI MOSFETs. " Electron Devices, IEEE Transactions on 51, no. 10 (2004): 1605-1612.
  11. Milik, Adam, and Andrzej Pulka. "Complex mathematical models simulation on mixed HDL-simulink platform. " In Human System Interactions, 2008 Conference on, pp. 380-385. IEEE, 2008.
  12. Siligaris, Alexandre, Gilles Dambrine, Dominique Schreurs, and François Danneville. "A new empirical nonlinear model for sub-250 nm channel MOSFET. " Microwave and Wireless Components Letters, IEEE 13, no. 10 (2003): 449-451.
  13. Hariharan, Venkatnarayan, Juzer Vasi, and Valipe Ramgopal Rao. "Drain current model including velocity saturation for symmetric-double-gate MOSFETs. " Electron Devices, IEEE Transactions on 55, no. 8 (2008): 2173-2180.
  14. Kirovski, Darko, Miodrag Potkonjak, and Lisa M. Guerra. "Improving the observability and controllability of datapaths for emulation-based debugging. "Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on 18, no. 11 (1999): 1529-1541.
  15. Paydavosi, Navid, Sarad Venugopalan, Yogesh Singh Chauhan, Juan Pablo Duarte, Srivatsava Jandhyala, Ali M. Niknejad, and Chenming Calvin Hu. "BSIM—SPICE models enable FinFET and UTB IC designs. " Access, IEEE1 (2013): 201-215.
  16. Taur, Yuan, Xiaoping Liang, Wei Wang, and Huaxin Lu. "A continuous, analytic drain-current model for DG MOSFETs. " Electron Device Letters, IEEE 25, no. 2 (2004): 107-109.
  17. He, Jin, Mansun Chan, Ganggang Zhang, Xing Zhang, and Yangyuan Wang. "A continuous analytic I–V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach. "Semiconductor science and technology 21, no. 3 (2006): 261.
  18. Using SIMULINK: Dynamic System Simulation for MATLAB. The Math's works, Inc. Natick, MA. (2004).
  19. Grout, Ian A. Integrated circuit test engineering: modern techniques. Springer Science & Business Media, 2005.
  20. Stephen, J. "Chapman, MATLAB Programming for Engineers, Brooks. " (2002).
  21. Sung-Mo Kang Yusuf Leblebici. Digital integrated circuits analysis and design.
  22. Greig, Thomas Alexander. "Development of CMOS active pixel sensors. " PhD diss. , Brunel University School of Engineering and Design PhD Theses, 2008.
Index Terms

Computer Science
Information Sciences

Keywords

Fet Mosfet Finfet