CFP last date
20 January 2025
Reseach Article

Comparative Study of Different Low Power Designs of Braun Multiplier using Double Gate MOSFET at 45nm Technology

Published on September 2015 by Jyoti Sankar Sahoo, Nirmal Kumar Rout
International Conference on Emergent Trends in Computing and Communication
Foundation of Computer Science USA
ETCC2015 - Number 2
September 2015
Authors: Jyoti Sankar Sahoo, Nirmal Kumar Rout
e68fe134-52db-4c63-8607-7b7d9888dec3

Jyoti Sankar Sahoo, Nirmal Kumar Rout . Comparative Study of Different Low Power Designs of Braun Multiplier using Double Gate MOSFET at 45nm Technology. International Conference on Emergent Trends in Computing and Communication. ETCC2015, 2 (September 2015), 17-21.

@article{
author = { Jyoti Sankar Sahoo, Nirmal Kumar Rout },
title = { Comparative Study of Different Low Power Designs of Braun Multiplier using Double Gate MOSFET at 45nm Technology },
journal = { International Conference on Emergent Trends in Computing and Communication },
issue_date = { September 2015 },
volume = { ETCC2015 },
number = { 2 },
month = { September },
year = { 2015 },
issn = 0975-8887,
pages = { 17-21 },
numpages = 5,
url = { /proceedings/etcc2015/number2/22338-4567/ },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Proceeding Article
%1 International Conference on Emergent Trends in Computing and Communication
%A Jyoti Sankar Sahoo
%A Nirmal Kumar Rout
%T Comparative Study of Different Low Power Designs of Braun Multiplier using Double Gate MOSFET at 45nm Technology
%J International Conference on Emergent Trends in Computing and Communication
%@ 0975-8887
%V ETCC2015
%N 2
%P 17-21
%D 2015
%I International Journal of Computer Applications
Abstract

As per the present scenario every device as well as circuits are to be implemented with low power techniques so as to withstand the power challenges. In an arithmetic circuit multiplier who has much significant role in association with addition and subtraction process is also to be designed with low power technique so as to reduce the overall power consumption by the circuit. In this paper a four bit Braun multiplier is designed with different low power techniques and the main component of it i. e. the full adder design is modified and implemented with double gate MOSFET and the second important component i. e. the AND gate is designed with three different low power techniques. All the designs are compared on the basis of power, delay and power delay product (PDP). The designs are implemented in Cadence Virtuoso Tool with 45nm technology for its validation

References
  1. Chin-Fa Hsieh, Chien-Hung Lin, Shu-Chung Yi, Ching-Shan Chien. 2004. IC Design of a 4 bit Braun multiplier.
  2. Lakshmi, P. S. H. S. , Rama Krishna, S. , Chaitanya, K. 2012. A Novel Approach for High Speed and Low Power 4-Bit Multiplier. IOSR Journal of VLSI and Signal Processing (IOSR-JVSP. ISSN: 2319 – 4200, ISBN No. : 2319 – 4197 Volume 1, Issue 3 (Nov. - Dec. 2012), PP 13-26.
  3. Shrivastava, A. K. , Akashe, Shyam. 2013. Design high performance and low power 10T full adder using Double Gate MOSFET at 45nm technology, ICCCCM. , pp. 1-5
  4. Amara Amara, Oliver Rozeau, Editors, 2009. Planar Double-Gate Transistor from Technology to circuit, Springer. pp. 1-20.
  5. Inaba, S. et. al, 2006. FinFET: the prospective multi-gate device for future SoC applications. In Proceedings of the 32nd European ESSCIRC Conference on Solid State Circuit.
  6. Wong, H. S. P. , et. al. 1998. Device design consideration for double gate, ground-plane, single- gated ultrathin. SOI MOSFET at the 25nm channel length generation, in IEDM. pp. 407-410.
  7. Nowak, E. et. al. 2004. Turning Silicon on its edge, IEEE circuits and Device Magazine. pp. 20-31.
  8. Aswale, PS. , Chopade, SS. 2013. Comparative Study of Different Low Power Design Techniques for Reduction of Leakage Power in CMOS VLSI Circuit. International Journal of Computer Applications. pp 0975-8887
  9. Malviya, H. , Nayar, S. , Roy, C. M. 2013. A New Approach For Leakage Power Reduction Techniques in Deep Submicron Technologies in CMOS Circuits for VLSI Applications. In International Journal of Advanced Research in
  10. Computer Science and Software Engineering. May
  11. Anitha, R. , Bagyaveereswaran, V. 2011 Braun's Multiplier Implementation using FPGA with Bypassing Techniques. International Journal of VLSI design & Communication Systems (VLSICS) Vol. 2, No. 3, September 2011
Index Terms

Computer Science
Information Sciences

Keywords

Braun Multiplier Double Gate Mosfet Sleepy Keeper Pass Transistor Logic