Requirements of RF CMOS device and its related design issues to operate at high frequencies are discussed. Problems faced by current CMOS models and its lack of accuracy in capturing high frequency are focused. To improve model accuracy, Vendor modeling approach is discussed to model frequency dependent parameters like substrate resistance, gate resistance and noise signals. In this connection, few design techniques of RF CMOS device to improve frequency dependent parameters are discussed. Limits possessed on CMOS scaling and an insight into the next generation CMOS devices have been overviewed.

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Rf Cmos Modeling Substrate And Gate Resistance Modeling Design Techniques Of Rf Cmos Scaling Multiple Gate Mosfet