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Analysis of Conventional CMOS and FinFET based 6-T XOR-XNOR Circuit at 45nm Technology
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 84 - Number 4 |
| Year of Publication: 2013 |
| Authors: Neha Yadav, Saurabh Khandelwal, Shyam Akashe |
10.5120/14562-2670
|
Neha Yadav, Saurabh Khandelwal, Shyam Akashe . Analysis of Conventional CMOS and FinFET based 6-T XOR-XNOR Circuit at 45nm Technology. International Journal of Computer Applications. 84, 4 ( December 2013), 4-9. DOI=10.5120/14562-2670
Abstract
As technology has scaled down, the implications of leakage current and power analysis for memory design have increased. To minimize the short channel effect Double-gate FinFET can be used in place of conventional MOSFET circuits due to the self-alignment of the two gates. Design for XOR and XNOR circuits is suggested to improve the speed and power. These circuits act as basic building blocks for many arithmetic circuits. This paper contrasts and evaluates the performance of conventional CMOS and FinFET based XOR-XNOR circuit design. It is based on the study of high speed, low power, and small area in XOR-XNOR digital circuits. The proposed FinFET based XOR and XNOR circuits have been designed using Cadence VIRTUOSO Tool applying voltage supply of 0. 2 to 1. 2 voltages, with temperature at 270C and all the simulation results have been generated by Cadence SPECTRE simulator at 45nm technology. Simulation results exhibit low power, delay, power, delay product (PDP), and average dynamic power consumption.
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