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Reduction of Leakage Power using Stacking Power Gating Technique in Different CMOS Design Style at 45Nanometer Regime
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 83 - Number 1 |
| Year of Publication: 2013 |
| Authors: Bhanupriya Bhargava, Pradeep Kumar Sharma, Shyam Akashe |
10.5120/14411-2497
|
Bhanupriya Bhargava, Pradeep Kumar Sharma, Shyam Akashe . Reduction of Leakage Power using Stacking Power Gating Technique in Different CMOS Design Style at 45Nanometer Regime. International Journal of Computer Applications. 83, 1 ( December 2013), 19-26. DOI=10.5120/14411-2497
Abstract
As transistor sizes scale down and levels of integration increase, leakage power has become a vital downside in modern low-power VLSI technology. This is often very true for ultra-low- voltage (ULV) circuits, wherever high levels of leakage force designers to selected relatively high threshold voltages, which limits performance. In this paper, we design different design approach of master slave D flip-flop with stacking power gating leakage reduction technique. Here these techniques essentially increase the effective resistance of leakage paths by adding sleep transistors between logic stacks and power supply rails. Power gating technique also provides many of the property from transistor stacking technique. The proposed approach saves maximum amount of the Leakage power without degrading the performance of the circuit. In this work we analyses the leakage power of three different types of CMOS design style such as pass transistor logic (PTL), transmission gates and gate diffusion input (GDI) design. All these proposed circuits are simulated with and without the application of leakage reduction techniques. The circuits are simulated using Cadence Virtuoso tool at 45nm technology for various parameters.
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