CFP last date
20 December 2024
Reseach Article

Article:CMOS Development and Optimization, Scaling Issue and Replacement with High-K Material for Future Microelectronics

by Davinder Rathee, Mukesh Kumar, Sandeep K. Arya
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 8 - Number 5
Year of Publication: 2010
Authors: Davinder Rathee, Mukesh Kumar, Sandeep K. Arya
10.5120/1208-1730

Davinder Rathee, Mukesh Kumar, Sandeep K. Arya . Article:CMOS Development and Optimization, Scaling Issue and Replacement with High-K Material for Future Microelectronics. International Journal of Computer Applications. 8, 5 ( October 2010), 10-17. DOI=10.5120/1208-1730

@article{ 10.5120/1208-1730,
author = { Davinder Rathee, Mukesh Kumar, Sandeep K. Arya },
title = { Article:CMOS Development and Optimization, Scaling Issue and Replacement with High-K Material for Future Microelectronics },
journal = { International Journal of Computer Applications },
issue_date = { October 2010 },
volume = { 8 },
number = { 5 },
month = { October },
year = { 2010 },
issn = { 0975-8887 },
pages = { 10-17 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume8/number5/1208-1730/ },
doi = { 10.5120/1208-1730 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T19:56:41.004770+05:30
%A Davinder Rathee
%A Mukesh Kumar
%A Sandeep K. Arya
%T Article:CMOS Development and Optimization, Scaling Issue and Replacement with High-K Material for Future Microelectronics
%J International Journal of Computer Applications
%@ 0975-8887
%V 8
%N 5
%P 10-17
%D 2010
%I Foundation of Computer Science (FCS), NY, USA
Abstract

The development and optimization of Silicon technology has been guided by CMOS scaling theory [1] and predications made by Semiconductor Industry (SIA) in the International Technology Roadmap for Semiconductor (ITRS). With the trend of scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors with Moore’s Law [2] requires replacement of conventional silicon dioxide layer with the higher permittivity material for gate dielectric. As the silicon industry moves to 32nm technology node and beyond complaints like leakage and power dissipation dominates. Managing such issues are crucial factors for reliable high speed operation and chip design. Although scaling will continue for couple of decades but device geometries reaches to atomic size and limitation of quantum mechanical physical boundaries. To address these problems there is need of innovation in material science & engineering, device structure, and new nano devices based on different principle of physics. Here we have elaborated about scaling issues and alternate high-k dielectric for Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Introducing a high-k material may replace today’s silicon dioxide technology and can also provide extendibility over several generations. C-V analyses have been studied for various MOS capacitor with conventional SiO2 and also with high-k material like Gd2O3, ZrO2, HfO2, and TiO2.

References
  1. D.Rathee, et al, proc. Of National Conference ITM, oct6(2007)82-87
  2. G.Moore, IEDM Tech., Dig. (1975)
  3. H.Iwai, Hei Wong, Microelectronics Engg. 83(2006) 1867-1904
  4. http://www.itrs.net
  5. B. Doris, et al, IEDM Tech Dig. (2002) 267.
  6. H.S.P Wong, et al, Proc. IEEE 87 (1999) 537
  7. D.Frenk, et al, Proc. IEEE 89 (2001) 259.
  8. H.Iwai Microelectronics Engg. 86(2009), 1520-1528.
  9. Sidda Reddy Kurakulla, M.S in Engg. Thesis, IIS Banglore, oct 27 , 2007.
  10. ITRS 2003, Edition, Semiconductor Industry Association (SIA), Austin, SEMATECH USA, 2706 from :http://www.itrs.net/ntrs/publntrs.nsf
  11. R Chau, et al, IEEE Electron Device Letter, 25 (2004) 408
  12. D.Mullar, et al, Nature, 758(1999) 399
  13. M. Radder, et al, IEDM technical Digest, (1998) 623.
  14. H.Iwai, Hei Wong, Microelectronics Engg. 83(2006) 1867-1904.
  15. H.Iwai, Sc in IEDM,2008.
  16. H.Wong,V.A.Gitsenko, Microelectron. Reliab 42(2002)597.
  17. K.Tse, et al, Microelectron Engg. 84(2007)2028.
  18. S.H.Lo, et al, IEEE Electron devices lett. 18 (1997) 209. a. Kingon, et al, Nature 406 (2000) 1032
  19. G.D. Wick, et al, J. of App. Phy 89 (2001) 5243
  20. D.Buchanan, IBM J.Res Develop 43(1999) 245
  21. L.Manchanda, et al, Idem Technical Digest (1998) 605.
  22. E.P.Gusev, et al, Appl. Phy lett 76(2000) 176.
  23. M.Copel, et al, Appl. Phy lett 78(2001)2670.
  24. D.A. Buchanan, et al, IEDM technical digest (2000)
  25. R.Ludeka, et al, Appl. Phy lett 76 (2001)2886
  26. M.Coepl, et al, Appl. Phy lett 76(2000)436
  27. T.S.Jeon, et al, Appl. Phy lett 78(2001)368
  28. W.J, et al, Appl. Phy lett 77(2000)3269.
  29. L. kang, et al, IEDM technical Digest (2000)181
  30. T.Modes, et al, Surf and coat Tech, 200 (2005)306
  31. Sin-iti Kitazawa, et al, Thin Solid Films 515 (2006) 1901.
  32. S.Murugesan, et al, Surf and Coat Tech, 201 (2007) 7713
  33. Shoujing, et al, jounal of physics series, 152 (2009) 012004
  34. D. Buchanan, IBM J.Res\Develop 43(1999)245
  35. A.M. Stoneham, Journal of Non-crystlline Solids 303 (2002) 114-122
  36. Sin-iti Kitazawa, et al, Thin Solid Films 515 (2006) 1901
  37. D. Buchanan, IBM J.Res\Develop 43(1999)245
  38. C.Kittel, Introduction to solid state physics 7th edition, john wiely & sons Inc New York (1996)
  39. G.D. Wilk, et al, J Appl Phy 89 (2001) 5243
  40. J.Rebertson, J Vac Sci B 18 (2000) 1785
  41. K Hubbard, D Sehlon, J Matr Reg 11 (1996) 2757
  42. Ep Gusev, et al, Appl phy letter 76 (2000) 176
  43. G.Lucovsky, et al, springer US (2002) 189.
  44. T.Modes, et al, Surf and coat Tech, 200 (2005)306
  45. Sin-iti Kitazawa, et al, Thin Solid Films 515 (2006) 1901.
  46. S.Murugesan, et al, Surf and Coat Tech, 201 (2007) 7713
  47. E.K.Evangelou, et al, J Appl phy 94 (2003) 318
  48. E.P.Gusev, et al, IBM research, Microelectronics engg.,59 (2001) 341
  49. Anieszka Borkowska, et al, workshop “Photnic and Microsystem”IEEE (2006).
  50. K.F. Albertin, et al, Journal of circuits and system v2n2 (2007) 89-93
  51. Banani Sen, et al, Solid State Electronics 51 (2007) 475-480
  52. Martin M Frank, et al, Microelectronics Engg. 86 (2009).
Index Terms

Computer Science
Information Sciences

Keywords

Scaling High-k Material oxides