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Reseach Article

An Unconditionally Stable Front End Low Noise Amplifier Design for 2.4 GHz ISM Band

by Santosh Kumar Patel, Shafqat Abdullah Khan, Sachin Kumar
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 71 - Number 22
Year of Publication: 2013
Authors: Santosh Kumar Patel, Shafqat Abdullah Khan, Sachin Kumar
10.5120/12621-9335

Santosh Kumar Patel, Shafqat Abdullah Khan, Sachin Kumar . An Unconditionally Stable Front End Low Noise Amplifier Design for 2.4 GHz ISM Band. International Journal of Computer Applications. 71, 22 ( June 2013), 34-38. DOI=10.5120/12621-9335

@article{ 10.5120/12621-9335,
author = { Santosh Kumar Patel, Shafqat Abdullah Khan, Sachin Kumar },
title = { An Unconditionally Stable Front End Low Noise Amplifier Design for 2.4 GHz ISM Band },
journal = { International Journal of Computer Applications },
issue_date = { June 2013 },
volume = { 71 },
number = { 22 },
month = { June },
year = { 2013 },
issn = { 0975-8887 },
pages = { 34-38 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume71/number22/12621-9335/ },
doi = { 10.5120/12621-9335 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T21:36:23.837059+05:30
%A Santosh Kumar Patel
%A Shafqat Abdullah Khan
%A Sachin Kumar
%T An Unconditionally Stable Front End Low Noise Amplifier Design for 2.4 GHz ISM Band
%J International Journal of Computer Applications
%@ 0975-8887
%V 71
%N 22
%P 34-38
%D 2013
%I Foundation of Computer Science (FCS), NY, USA
Abstract

This paper presents the design and simulation of a 2. 4 GHz ISM band front end single stage Low Noise Amplifier (LNA) for wireless transceiver system. This amplifier uses AVAGO ATF-54143 transistor which is a low noise and high dynamic range Pseudomorphic high electron mobility transistor. The proposed method is addressed to optimize noise performance and power efficient while maintaining good input and output matching. The design simulation has been performed using Advance Design Simulation (ADS) software. The designed LNA offers minimum noise figure less than 0. 38 dB, forward gain (S21) greater than 15 dB, input return loss less than -15 dB and output return loss (S22) less than -10 dB at frequency 2. 4 GHz. The Designed LNA can be used in various applications like Bluetooth, WI-FI, RFID, digital cordless telecommunication.

References
  1. Avago Technologies Datasheet, "ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package," Avago Technologies, USA, Tech. AV01- 0602EN August 5, 2008.
  2. G. Gonzalez (1997),"Microwave Transistor Amplifier: Analysis and Design", 2nd Edition, Upper Saddle River, NJ: Prentice – Hall Inc. 217, 294-303.
  3. Yazid Mohamed, Norsheila Fisal and Mazlina Esa "Simulation Study of Broadband LNA for Software Radio Application" June 2000.
  4. Joseph C. Bardinand, Sander Weinreb, "A 0. 1 GHz to 5 GHz cryogenic SiGe MMIC LNA," IEEE Microwave and Wireless Components Letters, vol. 19, no. 6, June 2009.
  5. Viranjay M. Srivastava, K. S. Yadav, and G. Singh, "Analysis of double gate CMOS for double-pole four-throw RF switch design at 45-nm technology," J. of Computational Electronics, vol. 10, no. 1-2, pp. 229-240, June 2011.
  6. Viranjay M. Srivastava, K. S. Yadav, and G. Singh, "Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch," Microelectronics Journal, vol. 42, no. 3, pp. 527-534, March 2011
  7. D. M. Pozar, "Microwave and RF Design of Wireless System" 3rd Edition: John Wiley & Sons Inc, 2001.
  8. M. E. Kaamouchi, M. S. Moussa, P. Delatte, G. Wybo, A. Bens, J. -P. Raskin, and D. Vanhoenacker-Janvier, "A 2. 4 GHz fully integrated ESD-protected low-noise amplifier in 130-nm PD SOI CMOS technology," IEEE Trans. Microwave Theory Tech. , vol. 55, pp. 2822-2831, Dec. 2007.
  9. A. V. Do, C. C. Boon, M. A. Do, K. S. Yeo, and A. Cabuk, "A subthreshold low-noise amplifier optimized for ultra-low-power applications in ISM band," IEEE Trans. Microwave Theory Tech. , vol. 56, pp. 286-292, Feb. 2008.
  10. M. Cimino, H. Lapuyade, Y. Deval, T. Taris, and J. -B. Begueret, "Design of a 0. 9 V 2. 45 GHz self-testable and reliability-enhanced CMOS LNA," IEEE J. Solid-State Circuits, vol. 43, pp. 1187-1194 May 2008.
  11. Yongguang Lu; Shu-hui Yang; Yinchao Chen; , "The design of LNA based on BJT working on 2. 2–2. 6GHz," Signal Processing Systems (ICSPS), 2010 2nd International Conference on , vol. 1, no. , pp. V1-143-V1-
Index Terms

Computer Science
Information Sciences

Keywords

Advance Design System Pseudomorphic high electron mobility transistor Forward Gain Low Noise Amplifier Noise Figure Stability Wireless LAN