International Journal of Computer Applications |
Foundation of Computer Science (FCS), NY, USA |
Volume 7 - Number 5 |
Year of Publication: 2010 |
Authors: Dhananjay E. Upasani, Sandip B. Shrote, Pallavi S.Deshpande |
10.5120/1162-1467 |
Dhananjay E. Upasani, Sandip B. Shrote, Pallavi S.Deshpande . Article:Standby Leakage Reduction in Nanoscale CMOS VLSI Circuits. International Journal of Computer Applications. 7, 5 ( September 2010), 1-4. DOI=10.5120/1162-1467
Most of the portable systems, such as cellular communication devices, and laptop computers operate from a limited power supply. Devices like cell phones have long idle times and operate in standby mode when not in use. Consequently, the extension of battery-based operation time is a significant design goal which can be made possible by controlling the leakage current flowing through the CMOS gate. This article reviews the off-state leakage mechanisms like weak inversion leakage, gate induced drain leakage and channel punchthrough current. Various circuit level techniques to reduce standby leakage and their design trade-off are discussed. Based on the surveyed techniques, a designer would be able to select the appropriate leakage optimization technique for a standby mode.