The week's pick
Reseach Article
Simulation of a GaP/ Si Heterojunction Thin Film Solar Cell on Glass Substrate
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 67 - Number 25 |
| Year of Publication: 2013 |
| Authors: K. A. S. M. Ehteshamul Haque, Muhtadi Quyed Choudhury, Tahmid Nahian Bin Quddus |
10.5120/11747-7394
|
K. A. S. M. Ehteshamul Haque, Muhtadi Quyed Choudhury, Tahmid Nahian Bin Quddus . Simulation of a GaP/ Si Heterojunction Thin Film Solar Cell on Glass Substrate. International Journal of Computer Applications. 67, 25 ( April 2013), 35-38. DOI=10.5120/11747-7394
Abstract
This work presents a 1D simulation of light J-V characteristics of a GaP/ Si heterojunction thin film solar cell on glass substrate. The device is composed of a GaP/ Si n-p heterojunction, where the p-type Si layer serves as the absorber. A heavily doped p-type Si layer is used between the absorber and the substrate as a Back Surface Field (BSF) layer. The obtained results show slight improvement in short-circuit current density (Jsc) and efficiency, compared to the present thin film poly-Si solar cells fabricated on glass substrate. At 1 sun, under AM1. 5G, the open-circuit voltage (Voc) and the short-circuit current density (Jsc) were obtained as 0. 5582 V and 28. 42 mA/cm2, respectively. With a fill factor of 0. 8274, the efficiency was calculated as 13. 83%. Afterwards, a number of thin film cell designs were proposed, with corresponding simulation outcomes. Besides this, saturation in short-circuit current density (Jsc) and open-circuit voltage (Voc) with increasing absorber layer thickness was illustrated, in light of relevant simulation results.
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