The week's pick
Random Articles
Reseach Article
Simulation of a GaP/ Si Heterojunction Thin Film Solar Cell on Glass Substrate
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 67 - Number 25 |
| Year of Publication: 2013 |
| Authors: K. A. S. M. Ehteshamul Haque, Muhtadi Quyed Choudhury, Tahmid Nahian Bin Quddus |
10.5120/11747-7394
|
K. A. S. M. Ehteshamul Haque, Muhtadi Quyed Choudhury, Tahmid Nahian Bin Quddus . Simulation of a GaP/ Si Heterojunction Thin Film Solar Cell on Glass Substrate. International Journal of Computer Applications. 67, 25 ( April 2013), 35-38. DOI=10.5120/11747-7394
Abstract
This work presents a 1D simulation of light J-V characteristics of a GaP/ Si heterojunction thin film solar cell on glass substrate. The device is composed of a GaP/ Si n-p heterojunction, where the p-type Si layer serves as the absorber. A heavily doped p-type Si layer is used between the absorber and the substrate as a Back Surface Field (BSF) layer. The obtained results show slight improvement in short-circuit current density (Jsc) and efficiency, compared to the present thin film poly-Si solar cells fabricated on glass substrate. At 1 sun, under AM1. 5G, the open-circuit voltage (Voc) and the short-circuit current density (Jsc) were obtained as 0. 5582 V and 28. 42 mA/cm2, respectively. With a fill factor of 0. 8274, the efficiency was calculated as 13. 83%. Afterwards, a number of thin film cell designs were proposed, with corresponding simulation outcomes. Besides this, saturation in short-circuit current density (Jsc) and open-circuit voltage (Voc) with increasing absorber layer thickness was illustrated, in light of relevant simulation results.
References
- Geoffrey A. Landis, "GaP/silicon Tandem Solar Cell with Extended Temperature Range", US Patent No. 7148417 (2006)
- M. Meyer and R. A. Metzger, "Flying high: The Commercial Satellite Industry Convert to Compound Semiconductor Solar Cells", Compound. Semiconductor, 2 (1996), pp. 22
- B. Garcia, Jr. , "Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas", M. Sc. Thesis, Naval Postgraduate School, California, USA (2007)
- U. S. Department of Energy. (2011) Energy Basics. [Online] Available: http://www. eere. energy. gov/basics/renewable_energy/pv_cell_structures. html
- Peter Wurfel, "Physics of Solar Cells: From Principles to New Concepts", Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim, Germany (2005) pp. 3
- Ioffe Physical Technical Institute. (2005) NSM Archive - Physical Properties of Semiconductors. [Online]. Available: http://www. ioffe. ru/SVA/NSM/Semicond/
- Md. Sharafat Hossain, Nowshad Amin, M. A. Matin, M. Mannir Aliyu, Takhir Razykov and Kamaruzzaman Sopian, "A numerical study on the prospects of high efficiency ultra thin ZnxCd1-xS/ CdTe solar cell", Chalcogenide Lett. 8(2) (2011), pp. 263
- Lin Aiguo, Ding Jianning, Yuan Ningyi, Wang Shubo, Cheng Guanggui and Lu Chao, "Analysis of the p+/p window layer of thin film solar cells by simulation", J. Semicond. 33 (3) (2012) pp. 023002-1
- C. Lee, H. Efstathiadis, J. E. Raynolds and P. Haldar, "Two-dimensional Computer Modeling of Single Junction a-Si:H Solar Cells", Proc. 34th Photovolt. Specialists Conf. , Philadelphia, USA (2009), pp. 1118
- J. W. Matthews, and A. E. Blakeslee, "Defects in epitaxial multilayers: I. Misfit dislocations", J. Cryst. Growth 27 (1974), pp. 118
- J. G. Fossum, "Physical operation of back-surface-field silicon solar cells," IEEE Trans. Electron Devices, 24(4) (1977), pp. 322
- T. Rachow, M. Ledinsky, S. Janz, S. Reber and A. Fezfer, "µc-Si Solar Cells by Direct Deposition with APCVD", 27th Eur. PV Sol. Energy Conf. Exhib. , Frankfurt, Germany (2012)
- J. L. Gray and Michael McLennan. (2008) Adept. [Online]. Available: http://nanohub. org/resources/adept/
- F. J. Morin and J. P. Maita, "Electrical Properties of Silicon Containing Arsenic and Boron", Phys. Rev. 96 (1954), pp. 28
- M. S. Tyagi and R. Van Overstraeten, "Minority Carrier Recombination in Heavily Doped Silicon", Solid State Electron. 26(6) (1983), pp. 577
- M. A. Green, "Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients", Solar Energy Materials and Solar Cells, 92 (11) (2008), pp. 130
- Y. C. Kao and O. Eknoyan, "Electron and hole carrier mobilities for liquid phase epitaxially grown GaP in the temperature range 200–550 K, J. Appl. Phys. 54 (1983), pp. 2468
- M. A. Green, "Solar cell fill factors: General graph and empirical expressions," Solid-State Electron. , 24(8) (1981), pp. 788
- K. Yamamoto, "Very thin film crystalline silicon solar cells on glass substrate fabricated at low temperature", IEEE Trans. Electron Devices 46 (10) (1999) pp. 2041
- M. A. Green, K. Emery, Y. Hishikawa, W. Warta and E. D. Dunlop, "Solar cell efficiency tables (version 39)", Prog. Photovolt. Res. Appl. 20 (2012), pp. 12
- O. Vetterl, A. Lambertz, A. Dasgupta, F. Finger, B. Rech, O. Kluth and H. Wagner, "Thickness dependence of microcrystalline silicon solar cell properties", Sol. Energy Mater. Sol. Cells 66 (2001), pp. 345
Index Terms
Keywords