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Characterization and Modeling of SiC based Positive Output Super Lift Luo Converter

by B. Lekshmi Sree, T. S. Saravanan
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 65 - Number 17
Year of Publication: 2013
Authors: B. Lekshmi Sree, T. S. Saravanan
10.5120/11014-6355

B. Lekshmi Sree, T. S. Saravanan . Characterization and Modeling of SiC based Positive Output Super Lift Luo Converter. International Journal of Computer Applications. 65, 17 ( March 2013), 13-19. DOI=10.5120/11014-6355

@article{ 10.5120/11014-6355,
author = { B. Lekshmi Sree, T. S. Saravanan },
title = { Characterization and Modeling of SiC based Positive Output Super Lift Luo Converter },
journal = { International Journal of Computer Applications },
issue_date = { March 2013 },
volume = { 65 },
number = { 17 },
month = { March },
year = { 2013 },
issn = { 0975-8887 },
pages = { 13-19 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume65/number17/11014-6355/ },
doi = { 10.5120/11014-6355 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T21:19:04.750297+05:30
%A B. Lekshmi Sree
%A T. S. Saravanan
%T Characterization and Modeling of SiC based Positive Output Super Lift Luo Converter
%J International Journal of Computer Applications
%@ 0975-8887
%V 65
%N 17
%P 13-19
%D 2013
%I Foundation of Computer Science (FCS), NY, USA
Abstract

A behavioral model in PSpice for a silicon carbide (SiC) power MOSFET rated at 1200V / 33A for a wide temperature range is developed by extracting the device parameters from the data sheet. The static and dynamic behavior of the SiC power MOSFET is simulated and compared with the device characteristics to validate the accuracy of the PSpice model. The temperature dependent behavior of the MOSFET is simulated to show the effectiveness of the switch at the prolonged temperature. SiC based multistage super lift Luo converter is simulated for analyzing the performance of the converter in terms of energy factor, pumping factor, storage factor, ripple factor and efficiency.

References
  1. Biswajit Ray, Bloomsburg, Hiroyuki kosai and James D Scofield (2007) '200°C Operation of a DC-DC Converter with SiC Power Devices' IEEE Transaction, pp. 998-1002.
  2. CMF20120D-Silicon Carbide Power MOSFET 1200V 80 m? Z-FeTTM MOSFET data sheet.
  3. Fang Lin Luo (2003),' Positive output super-lift converters' IEEE transactions on Power Electronics, vol. 18,issue no 1, pp 105-113.
  4. Fanglin Luo, (2011) 'Investigation on Split –Capacitors Applied in Positive Output Super Lift Luo converters' IEEE Transaction, pp. 2792-2797.
  5. Fang Lin Luo, Hong Ye (2007) 'Small Signal Analysis of Energy Factor and Mathematical Modeling for Power DC–DC Converters' IEEE transactions on Power Electronics, VOL. 22, NO. 1, pp 69-79.
  6. IRF830 MOSFTE data sheet
  7. John Z. Shen1, Yali Xiong1, Xu Cheng1, Yue Fu1, and Pavan Kumar 'Power MOSFET Switching Loss Analysis A New Insight' School of Electrical Engineering and Computer Science University of Central Florida, Orlando pp no 1438-1432.
  8. Kazuto Tako, Yasunori Tanaka and Keiji wada (2011) 'High-Power Converters with High Switching Frequency Operation using SiC-PiN Diodes and Si-IEGTs' IEEE Transaction 1st International Conference on Electric Power Equipment – Switching Technology pp. 412-417.
  9. Jun Wang, Jun Li, Xiaohu Zhou, Tiefu Zhao, Alex Q. Huang (2008) '10 kV SiC MOSFET Based Boost Converter' IEEE Transaction, pp. 1-6.
  10. Venugopal R. Garuda and Marian K. Kazimierczuk, Mysore L. Ramalingam and Les Tolkkinen and Matthew (2001) ' High temperature testing of a buck converter using silicon and silicon carbide diodes' IEEE Transaction, pp. 317-322.
Index Terms

Computer Science
Information Sciences

Keywords

Positive output super lift Luo converter Silicon Carbide Switch modeling in OrCad Pspice

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