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Reseach Article

Efficient CNFET-based Rectifiers for Nanoelectronics

by Mohammad Hossein Moaiyeri, Keivan Navi, Omid Hashemipour
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 64 - Number 2
Year of Publication: 2013
Authors: Mohammad Hossein Moaiyeri, Keivan Navi, Omid Hashemipour
10.5120/10606-5315

Mohammad Hossein Moaiyeri, Keivan Navi, Omid Hashemipour . Efficient CNFET-based Rectifiers for Nanoelectronics. International Journal of Computer Applications. 64, 2 ( February 2013), 21-25. DOI=10.5120/10606-5315

@article{ 10.5120/10606-5315,
author = { Mohammad Hossein Moaiyeri, Keivan Navi, Omid Hashemipour },
title = { Efficient CNFET-based Rectifiers for Nanoelectronics },
journal = { International Journal of Computer Applications },
issue_date = { February 2013 },
volume = { 64 },
number = { 2 },
month = { February },
year = { 2013 },
issn = { 0975-8887 },
pages = { 21-25 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume64/number2/10606-5315/ },
doi = { 10.5120/10606-5315 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T21:15:21.367304+05:30
%A Mohammad Hossein Moaiyeri
%A Keivan Navi
%A Omid Hashemipour
%T Efficient CNFET-based Rectifiers for Nanoelectronics
%J International Journal of Computer Applications
%@ 0975-8887
%V 64
%N 2
%P 21-25
%D 2013
%I Foundation of Computer Science (FCS), NY, USA
Abstract

By scaling down the feature size of CMOS technology deeply in nanoranges, many problems and challenges, such as short channel effects, will restrict its usefulness for the near future robust and energy efficient applications. The CNFET nanodevice seems to be a feasible alternative for bulk CMOS due to its unique electrical properties and similarities with MOSFET. In this paper, efficient CNFET-based analog inverter, half-wave rectifier and full-wave rectifier circuits are proposed for nanoelectronics. The proposed rectifiers are designed based on a CNFET-based 2-transistor analog inverter and a 2-transistor MAX structure. While the previous designs have suffered from a high number of transistors or threshold loss problem, the unique properties of CNFET nanodevice, such as tunable threshold voltage, are utilized in the proposed circuits to reach efficient, full-swing and high-precision designs. The proposed circuits are simulated using HSPICE based on the standard MOSFET-like CNFET model, valid for ≥ 10 nm technology nodes and the functionalities are verified with both DC and transient analyses.

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Index Terms

Computer Science
Information Sciences

Keywords

Nanoelectronics Carbon nanotube field effect transistor (CNFET) rectifier Analog inverter