International Journal of Computer Applications |
Foundation of Computer Science (FCS), NY, USA |
Volume 48 - Number 8 |
Year of Publication: 2012 |
Authors: V. Leela Rani, M. Madhavi Latha, A. Sai Ramesh |
10.5120/7370-0146 |
V. Leela Rani, M. Madhavi Latha, A. Sai Ramesh . Galeorstack- A Novel Leakage Reduction Technique for Low Power VLSI Design. International Journal of Computer Applications. 48, 8 ( June 2012), 29-38. DOI=10.5120/7370-0146
Leakage power consumption plays a significant role in current CMOS technology. International Technology Roadmap for semiconductors reports that leakage power consumption dominates the total chip power consumption as technology advances to nano scale. Most of the battery operated applications such as cell phones, Laptops etc requires a longer battery life, which can be made possible by controlling leakage current flowing through the CMOS gate. This paper presents leakage current mechanisms and different leakage reduction techniques to reduce leakage power consumption. We propose a novel leakage reduction technique named "Galeorstack" which can achieve better leakage reduction by maintaining exact logic state than the other techniques discussed in this paper. The proposed technique has been verified and compared with the other techniques for NOR and EXOR logic circuits and implemented using standard cells of 90nm CMOS process from CADENCE TOOLS. GaleorStack technique would be the best choice to the designer for the low leakage and less delay while achieving exact logic state.