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Reseach Article

Performance Evaluation of Dual-X CCII designed using Bulk CMOS and Hybrid approach @ 32nm Technology Node

by Ale Imran
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 47 - Number 22
Year of Publication: 2012
Authors: Ale Imran
10.5120/7490-0553

Ale Imran . Performance Evaluation of Dual-X CCII designed using Bulk CMOS and Hybrid approach @ 32nm Technology Node. International Journal of Computer Applications. 47, 22 ( June 2012), 34-39. DOI=10.5120/7490-0553

@article{ 10.5120/7490-0553,
author = { Ale Imran },
title = { Performance Evaluation of Dual-X CCII designed using Bulk CMOS and Hybrid approach @ 32nm Technology Node },
journal = { International Journal of Computer Applications },
issue_date = { June 2012 },
volume = { 47 },
number = { 22 },
month = { June },
year = { 2012 },
issn = { 0975-8887 },
pages = { 34-39 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume47/number22/7490-0553/ },
doi = { 10.5120/7490-0553 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T20:42:33.650374+05:30
%A Ale Imran
%T Performance Evaluation of Dual-X CCII designed using Bulk CMOS and Hybrid approach @ 32nm Technology Node
%J International Journal of Computer Applications
%@ 0975-8887
%V 47
%N 22
%P 34-39
%D 2012
%I Foundation of Computer Science (FCS), NY, USA
Abstract

There is a rapid need to explore the design issues of circuits in deep submicron nodes. This paper presents the design and performance analysis of Dual-X CCII, a widely used analog building block using state of the art Si CMOS and a proposed Hybrid (employing both CMOS and CNFET) configuration at 32nm. Current bandwidths port resistances along with power consumption have been chosen as the parameters for comparison. HSPICE simulator has been used to carry out the extensive simulations at a reduced power supply of ±0. 9V

References
  1. Zeki. A and Toker. A " DXCCII based tunable gyrator", International Journal of Electronics and Communications,59-62.
  2. Fabre. A "Composite second generation current conveyor with reduced parasitic resistance ",Electronic Letters,30,377-378
  3. Sadri Oscan and Hakan Kutman, "A nocel multi input single output filterwith reduced number of passive elements using single current conveyors"IEEE midwest symposium on Circuits and systems,August 2000Tavel, P. 2007 Modeling and Simulation Design.
  4. N. B. Feki and D. S. Masmoudi "High performance dual output second and third generation CC and Curent mode filter applications" International conference on systems,signals and devices,2003
  5. Deng, N. Patil, K. Ryu, A. Badmaev, C. Zhou, S. Mitra " Carbon Nanotube Transistor Circuits: Circui level Performance Benchmarking and Design options for living with imperfections," International Solid State Circuits Conference,pp. 70-71, San Francisco, CA, February,
  6. A. Javey,J. Guo,D. B. Farmer & H. Dai " Carbon Nanotube field Effect transistors with Integrated Ohmic Contacts " NanoLetters,vol4,pp447-450,2004
  7. A. Javey,J. Guo,D. B. Farmer & H. Dai"High performance n-type Carbon nanotube field effect transistors with chemically doped contacts", Nano Letters,vol5,pp345-348,2005
  8. Minaei. S and Yuce. E "A new full wave rectifier circuit employing single dual-x ccii", International Journal of Electronics,Vol95,no8,777-784
  9. J. Appenzeller " CarbonNanotubes for high performance electronics (Invited paper), Proceedings of the IEEE 96(2)(2008), 206
  10. Patil N, Lin A, Myers ER, Wong HSP "Integrated wafer scale growth and transfer of directional carbon nanotubes and misaligned carbon-nanotube immune logic structures", Proc Symp VLSI techn Digest tech papers, 2008, 205-206
  11. Patil N, Deng J, Lin A ,Wong HSP "Designed methods for misaligned and mispositined carbon nanotube immune circuits", IEEE Trans. Comput Aided Des Integr Syst. 2008, 27(10):1725-1736
  12. A. Javey, J. Guo, Q. Wang et al ' Self alligned ballistic molecular transistors and electrically parallel nanotube arrays "Nanoletters,4(7), 2004,1319-1322
  13. Deng J, Wong HSP, "A circuit compatabile spice model for enhancement mode carbon nanotube field effect transistors" Proc. of the International Conference on simulation of semiconductor process and devices, 2006, 166-169
  14. J. Deng,HSP Wong" Modelling and analysis of planar gate capacitance for 1-d fet with cylindrical conducting channels, IEEE Transaction on Electron Devices, 54, 2007, 2377-2385.
  15. Patil N, Lin A, Zhang J et al "Scalable carbon nanotube computational and storage circuits immune to metallic and mid-positioned carbon nanotubes, IEEE Transactions on Nanotechnology 2010 (99).
  16. Arijit Raychaudhary, Ali Keshvarzai, Juanita Kurtin,Vivek De, Kaushik Roy, "Optimal spacing of carbon nanotubes in a CNFET array for highest circuit performance" IEEE, 2006.
Index Terms

Computer Science
Information Sciences

Keywords

Dual-x Current Conveyor Si Cmos Cnt Cnfet Hybrid Configuration Bandwidth Port Resistance