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Temperature effects on Threshold Voltage and Mobility for Partially Depleted SOI MOSFET

by Neha Goel, Ankit Tripathi
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 42 - Number 21
Year of Publication: 2012
Authors: Neha Goel, Ankit Tripathi
10.5120/5844-8163

Neha Goel, Ankit Tripathi . Temperature effects on Threshold Voltage and Mobility for Partially Depleted SOI MOSFET. International Journal of Computer Applications. 42, 21 ( March 2012), 56-58. DOI=10.5120/5844-8163

@article{ 10.5120/5844-8163,
author = { Neha Goel, Ankit Tripathi },
title = { Temperature effects on Threshold Voltage and Mobility for Partially Depleted SOI MOSFET },
journal = { International Journal of Computer Applications },
issue_date = { March 2012 },
volume = { 42 },
number = { 21 },
month = { March },
year = { 2012 },
issn = { 0975-8887 },
pages = { 56-58 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume42/number21/5844-8163/ },
doi = { 10.5120/5844-8163 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T20:31:58.690436+05:30
%A Neha Goel
%A Ankit Tripathi
%T Temperature effects on Threshold Voltage and Mobility for Partially Depleted SOI MOSFET
%J International Journal of Computer Applications
%@ 0975-8887
%V 42
%N 21
%P 56-58
%D 2012
%I Foundation of Computer Science (FCS), NY, USA
Abstract

As the channel lengths of conventional planar metal oxide semiconductor field effect transistor (MOSFET) shrink into the nano meter regime, performance of the devices becomes degraded mainly because of short channel effects. The nano range silicon on insulator metal oxide semiconductor field effect transistors (SOI-MOSFET) with Multi gate around the silicon channel can significantly improve the short channel effects and are therefore considered to be promising candidates for the next generation. In this paper a detailed investigation of short-channel effects in advanced partially depleted SOI N-MOSFETs is done, which shows SOI devices from the same wafer can behave as fully or partially depleted according to the channel length. This paper Comprise the Low temperature behavior of threshold Voltage and Mobility for Partially Depleted SOI MOSFET.

References
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Index Terms

Computer Science
Information Sciences

Keywords

Partially Depleted Soi Mosfet Low Temperature Effects Conclusion

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