The week's pick
Random Articles
Reseach Article
Low Frequency Noise in SiGe Bipolar Transistor: Effect of Extrinsic Base Implantation Traps
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 33 - Number 6 |
| Year of Publication: 2011 |
| Authors: M. Bouhouche, S.Latreche, C. Gontrand |
10.5120/4147-5874
|
M. Bouhouche, S.Latreche, C. Gontrand . Low Frequency Noise in SiGe Bipolar Transistor: Effect of Extrinsic Base Implantation Traps. International Journal of Computer Applications. 33, 6 ( November 2011), 59-64. DOI=10.5120/4147-5874
Abstract
This paper reports a numerical modeling of a NPN SiGe heterojunction bipolar transistor (HBT) taking into account the impact of electrically active defects in the HBT device. The purpose was to investigate the DC and low frequency noise performances of SiGe HBT taking into account effect of base implantation defects. These defects physically located at emitter-base junction, are responsible for parasitic current fluctuations at the origin of low frequency noise in devices. The first part of the paper deals with degradation of DC characteristics of the device due to the influence of extrinsic base implantation defects. The aim was to identify the parasitic effects of implantation defects on the HBT static characteristics. Generally, the presence of these defects in the structure, results in a no ideal behavior of the base currents. The second part of the paper deals with the analysis of low frequency noise (LFN) in the SiGe HBT. Usually, LFN of these devices was related to the existence of defects and imperfections in the semiconductor. The purpose was to examine the impact of implantation defects on the noise in SiGe HBTs. In this fact, the LFN of SiGe HBT was characterized, and a discussion of the possible physical origins of low-frequency noise is presented.
References
- Harame, D. L., Ahlgren, D. C., Coolbaugh, D. D., Dunn, J. S., Freeman, G., Gillis, J. D., Groves, R. A., Hendersen, F. N., Johnson, A. R. A., Joseph, J., Subbanna, S., Victor, A. M., Watson, K. M., Webster, C. S. and Zampardi, P. J. 2001. Current status and future trends of SiGe BiCMOS technology. IEEE. Trans Electron Devices. (Nov 2001), 2575-2594.
- Lanzerotti, L. D., Amour, A .S., Liu, C., Sturm, J. C., Watanabe, J. K. and Theodore, N. D. 1996. Si/Si1-x-y GexCy/Si Heterojunction Bipolar Transistor. IEEE. Electron Device Letters. 334-337.
- Cressler, J. D. 1998. SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications, IEEE. trans on Microwave Theory and Techniques. 572-589.
- Patton, G. L., Harame, D .L., Stork, J. M. C., Meyerson, B. S., Scilla, G. J. and Ganin, E. 1989. Graded SiGe base poly-emitter heterojunction, bipolar transistors. IEEE. Electron Device Lett. 534-536.
- Lanzerotti, L. D., Sturm, J. C. Stach, E., Hull, R., Buyuklimanli, T. and Magee, C. 1996. Suppression of boron out diffusion in SiGe HBT’s by carbon incorporation. IEEE International Electron Device. 249–252.
- Denorme, S., Bousseta, H., Chantre, A., Vacent, G. and Mouis, M. 1995. Demonstration of enhanced base diffusion due to extrinsic base implantations in submicron polySi emitter epitaxial base bipolar transistor. Proceedings of European Solid State Device Research Conference. (sept 1995) 513-516.
- Lanzerotti, L. D., Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T. and Magee, C. 1996. Suppression of boron out diffusion in SiGe HBT’s by carbon incorporation. IEEE. International Electron Device Meeting.
- Osten, H. J., Lippert, G., Gaworzewski P. and Sorge, R. 1997. Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers. Applied Physics Letters. 1522-1524.
- Militaru, L., Souifi, A., Mouis, M., Chantre, A. and Brémond, G. 2001. Investigation of deep traps in silicon–germanium epitaxial base bipolar transistors with a single polysilycon quasi self aligned architecture. Microelectronic Reliability. 253-263.
- Chantre, A., Chevalier, P., Avenier, G., Duvernay, J., Vandelle, B., Brossard, F. and Dutartre, D. Advanced SiGe:C BiCMOS technologies using selective base epitaxie, ISTDM, Taiwan.
- Atlas Users Manual device simulation software, Silvaco International.
- Vempati, L. S., Cressler, J. D., Babcock, F. A., Jaeger, R. C. and Harame, D. L. 1996. Low frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors. IEEE J. Solid State Circuits, 1458-1467.
- Markus, H. A. W. and Kleinpenning, T. G. M. 1995. Low frequency noise in polysilicon emitter bipolar transistors. IEEE. Trans Electron Devices. 720-727.
- Tang, J., Niu, G., Jin, Z., Cressler, J. D., Zhang, S., Joseph, A. J. and Harame, D. L. 2002. Modeling and characterization of SiGe HBT low-frequency noise figures of merit for RFIC applications. IEEE Trans. Microwave Theory and Techniques. 2467-2473.
- Jouan, S., Planche, R., Baudry, H., Ribot, P., Chroboczek, J. A., Dutartre, D., Gloria, D., Laurens, M., Llinares, M., Marty, A., Monroy, C., Morin, R., Pantel, A., Perrotin, J., de Pontcharra, O., Regolini, J. L., Vincent, G. and Chantre, A. 1999. A High-Speed Low 1/f Noise SiGe HBT technology Using Epitaxially-Aligned Polysilicon Emitters. IEEE Trans, On Electron Devices. (July 1999). 1525-1531.
- Lukyanchikova, N., Garbar, N., Petrichuk, M., Schiz J. F. W. and Ashburn, P. 2001. The Influence of BF2 and F Implants on the 1/f Noise in SiGe HBTs with a Self-Aligned Link Base. IEEE. Trans. on Electron Devices. 2808-2815.
Index Terms
Keywords