The week's pick
Random Articles
Reseach Article
Fabrication and Study of Memory Cell Switching Properties based on Ag2S Compound
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 182 - Number 40 |
| Year of Publication: 2019 |
| Authors: Azam Adnan Mohammed Al-Kubaa, Khalid Khaleel Mohammad and |
10.5120/ijca2019918486
|
Azam Adnan Mohammed Al-Kubaa, Khalid Khaleel Mohammad and . Fabrication and Study of Memory Cell Switching Properties based on Ag2S Compound. International Journal of Computer Applications. 182, 40 ( Feb 2019), 45-48. DOI=10.5120/ijca2019918486
Abstract
There are many materials having non-volatile resistance change has been studied as potential candidates for next generation of non-volatile memory devices, in this device, information is stored as a change in resistance due to the formation of the metallic filament via the reduction of metal ions in the solid electrolyte. Key attributes are low voltage, low current, rapid write and erase, good retention and endurance, and the ability for the storage cells to be physically scaled to a few nm. This paper presents experimental I-V characteristics and switching time results for solid state devices based on silver sulfide (Ag2S) as new generation of non-volatile memory.
References
- Michael N. Kozicki, Chakravarthy Gopalan,” Non-Volatile Memory Based on Solid Electrolytes,” Center for Solid State Electronics Research Arizona State University.0- 7803-8726 0/1/04/$20.00©2004 IEEE.
- Massood Tabib-Azar, and Yan Xie,” Non-Volatile Solid-Electrolyte Memory Devices: Electronic versus Optical Latent Image Formation in Silver Halides,” Case Western Reserve University Cleveland, Ohio 44106.ECS-Trans.3,28 2006.
- Chakravarthy Gopalan, Yi Ma, Tony Gallo,” Demonstration of Conductive Bridging Random Access Memory (CBRAM) in Logic CMOS Process,” 978-1-4244-6721- 1/10/$26.00 ©2010 IEEE.
- R. Waser, R. Dittmann, G. Staikov and K. Szot, Adv. Mater. 21 2632 (2009).
- D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The missing memristor found,” Nature, vol. 453, no. 7191, pp. 80-83, May 2008.
- Tong Liu “Nonvolatile and Volatile Resistive Switching Characterization, Modeling, Memristive Subcircuits” Ph.D. thesis. Electrical Engineering department in Virginia Polytechnic Institute and State University. April 29, 2013.
- Shong Yin “Solution Processed Silver Sulfide Thin Films for Filament Memory Applications” Ph.D. thesis, Electrical Engineering and Computer Sciences University of California at Berkeley, December 17, 2010.
- Agnes GUBICZA, Resistive switching phenomena in Ag2S based nanojunctions, Ph.D. thesis, Budapest University of Technology and Economics, Institute of Physics, Department of Physics (2016)
Index Terms
Keywords