The week's pick
Reseach Article
High Efficiency Tandem Solar Cell based on InGaP and GaAs for Sustainable Energy Applications
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 181 - Number 18 |
| Year of Publication: 2018 |
| Authors: Khalid Khaleel Mohammed |
10.5120/ijca2018917867
|
Khalid Khaleel Mohammed . High Efficiency Tandem Solar Cell based on InGaP and GaAs for Sustainable Energy Applications. International Journal of Computer Applications. 181, 18 ( Sep 2018), 26-30. DOI=10.5120/ijca2018917867
Abstract
Sustainable energy can be generated in many ways and from different sources, one of the more interested one is the solar cell energy, it is cheap, clean and has no pollution like other source of energy. As well as it has no effect on climate change like fossil fuels. The more challenge point in high efficiency solar cell systems is the efficiency of the cells which must exceeds 15-30⁒ in order to be efficient and make more benefit from the incident solar spectrum. In this research a multi junction (tandem) solar cell is designed using Silvaco-Atlas programmer. The designed solar cell structure is composed of two cells, which are InGaP and GaAs materials, the InGaP is designed to be the top cell while GaAs designed to be the bottom cell with 0.7 µm thickness as a top cell and 2.8 µm as the bottom cell. The parameters of the designed tandem cell were calculated and compared with other cells; these parameters are the I-V characteristics and external quantum efficiency. The spectrums of the cells were calculated for a wavelength range from 300 µm to 2500 µm. It is found that the maximum response occurs between 300 and 1100 µm.
References
- G. L. Ara´ujo and A. Mart´ı, “Absolute limiting efficiencies for photovoltaic energy conversion,” Solar Energy Materials and Solar Cells, vol. 33, no. 2, pp. 213–240, 1994.
- W. Shockley and H. J. Queisser, “Detailed Balance Limit of Efficiency of p-n Junction Solar Cells,” Journal of Applied Physics, vol. 32, no. 3, pp. 510–519, 1961.
- J. Nelson, J. Barnes, N. Ekins-Daukes, B. Kluftinger, E. Tsui, K. Barnham, C. T. Foxon, T. Cheng, and J. S. Roberts,“Observation of suppressed radiative recombination in single quantum well p-i-n photodiodes,” Journal of AppliedPhysics, vol. 82, no. 12, pp. 6240–6246,
- Lumb MP, Gonz_alez M, Bailey CG, Vurgaftman I, Meyer JR, Abell J, Yakes M, Hoheisel R, Tischler JG, Stavrinou PN et al. Drift-diffusion modeling of InP-based triple junction solar cells. P Soc Photo-Opt Ins 2013; 8620: 1-9.
- Baudrit M, Algora C. Modeling of GaInP/GaAs dual junction solar cells including tunnel junction. In: IEEE 2008 Photovoltaic Specialists Conference; {11-16 May 2008; San Diego, CA, USA}.
- M. A. Green, K. Emery, Y. Hishikawa, W. Warta, and E. D. Dunlop, “Solar cell efficiency tables ,” Progress in Photovoltaics: Research and Applications, vol. 23, no. 7, pp. 805–812,Jun.2015.
- Amin, N., Tang, M., Sopian, K., 2007. Numerical modeling of the copper–indium–selenium (CIS) based solar cell performance by AMPS-1D. In: Proc. IEEE 5th Student Conference on Research and Development, Malaysia.
- Baudrit M, Algora C. Modeling of GaInP/GaAs dual junction solar cells including tunnel junction. In: IEEE 2008 Photovoltaic Specialists Conference; {11-16 May 2008; San Diego, CA, USA}.
- Jackson P, Hariskos D, Lotter E, Paetel S, Wuerz R, Menner R, Wischmann W, Powalla M. New world record efficiency for (In,Ga)Se2 thin-film solar cells. Photovolt. Res. Appl. 2011; 19: 894- 897.
- Lumb MP, Gonz_alez M, Bailey CG, Vurgaftman I, Meyer JR, Abell J, Yakes M, Hoheisel R, Tischler JG, Stavrinou PN et al. Drift-diffusion modeling of InP-based triple junction solar cells. P Soc Photo-Opt Ins 2013.
Index Terms
Keywords