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Investigation of Electrical Performance of HfO2-ZnO Bilayer Channels of Thin-Film Transistors using TCAD

by Shashi Kant Dargar, J. K. Srivastava, Santosh Kumar Bharti
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 180 - Number 7
Year of Publication: 2017
Authors: Shashi Kant Dargar, J. K. Srivastava, Santosh Kumar Bharti
10.5120/ijca2017916068

Shashi Kant Dargar, J. K. Srivastava, Santosh Kumar Bharti . Investigation of Electrical Performance of HfO2-ZnO Bilayer Channels of Thin-Film Transistors using TCAD. International Journal of Computer Applications. 180, 7 ( Dec 2017), 46-49. DOI=10.5120/ijca2017916068

@article{ 10.5120/ijca2017916068,
author = { Shashi Kant Dargar, J. K. Srivastava, Santosh Kumar Bharti },
title = { Investigation of Electrical Performance of HfO2-ZnO Bilayer Channels of Thin-Film Transistors using TCAD },
journal = { International Journal of Computer Applications },
issue_date = { Dec 2017 },
volume = { 180 },
number = { 7 },
month = { Dec },
year = { 2017 },
issn = { 0975-8887 },
pages = { 46-49 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume180/number7/28816-2017916068/ },
doi = { 10.5120/ijca2017916068 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-07T01:00:03.093416+05:30
%A Shashi Kant Dargar
%A J. K. Srivastava
%A Santosh Kumar Bharti
%T Investigation of Electrical Performance of HfO2-ZnO Bilayer Channels of Thin-Film Transistors using TCAD
%J International Journal of Computer Applications
%@ 0975-8887
%V 180
%N 7
%P 46-49
%D 2017
%I Foundation of Computer Science (FCS), NY, USA
Abstract

This paper shows the investigation of electrical performance of ZnO-based thin-film transistors (TFTs) with a multichannel layer. The multichannel TFTs consisting of HfO2 and ZnO layers were deployed to insight of sufficient channel mobility and electrical stability. The obtained sub-threshold slope (1.69 ± 0.16 Volt/decade) decreased in comparison to single channel, with an increase in ON/OFF ratio ION/IOFF (3.1 ± 1.6 × 105). The device mobility is found increased due to addition the channel layer. The mobility achieved is 2.36 × 10-3 cm2/V-s. Due to the reduced interface trap density between the channel and dielectric layers, increases in the offset and the bandgap and improves the dielectric and interface quality. The oxide TFTs with a multilayer channel displayed comparatively good stability and mobility.

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Index Terms

Computer Science
Information Sciences

Keywords

Hafnium-oxide (HfO2) multilayer channel thin-film transistor (TFT) ZnO TCAD.

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