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High Efficiency Class F Power Amplifier Design for GSM System

by Shamil H. Hussein
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International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 178 - Number 37
Year of Publication: 2019
Authors: Shamil H. Hussein
10.5120/ijca2019919248

Shamil H. Hussein . High Efficiency Class F Power Amplifier Design for GSM System. International Journal of Computer Applications. 178, 37 ( Aug 2019), 38-42. DOI=10.5120/ijca2019919248

@article{ 10.5120/ijca2019919248,
author = { Shamil H. Hussein },
title = { High Efficiency Class F Power Amplifier Design for GSM System },
journal = { International Journal of Computer Applications },
issue_date = { Aug 2019 },
volume = { 178 },
number = { 37 },
month = { Aug },
year = { 2019 },
issn = { 0975-8887 },
pages = { 38-42 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume178/number37/30780-2019919248/ },
doi = { 10.5120/ijca2019919248 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-07T00:52:27.946084+05:30
%A Shamil H. Hussein
%T High Efficiency Class F Power Amplifier Design for GSM System
%J International Journal of Computer Applications
%@ 0975-8887
%V 178
%N 37
%P 38-42
%D 2019
%I Foundation of Computer Science (FCS), NY, USA
Abstract

Due to the high increase in and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. This paper presents the design and analysis of Class F power amplifier. The Class F amplifier is used in a base station for mobile system because of its high efficiency. An implementation of high efficiency class-F power amplifier with Gallium Arsenide (GaAs) Field Effect Transistor (FET) was realized in this paper. The analysis and design of Class F power amplifier were studied at different operating frequency. It is found that the amplifier can operate at GSM and CDMA base station at input power level more than 15dBm. The simulation of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS).

References
  1. S.C. Cripps, 2004 RF Power Amplifier For Wireless Communication. Artech House, Second Edition.
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  7. F. H. Raab, "Maximum Efficiency and Output of Class-F Power Amplifiers", IEEE Transactions on Microwave Theory and Techniques, Vol. 49, No. 6, June 2001.
  8. Junghwan Moon, 2012. Behaviors of Class-F and Class-F-1 Amplifiers. IEEE Transactions on Microwave Theory and Techniques, Vol. 60, No. 6.
  9. Ramon A. Beltran, 2014. Class-F and Inverse Class-F Power Amplifier Loading Networks Design Based upon Transmission Zeros. Skyworks Solutions Inc., 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA.
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Index Terms

Computer Science
Information Sciences

Keywords

Power Amplifier (PAs) Class F power amplifier Gallium Arsenide (GaAs FET).

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