The week's pick
Reseach Article
Memristor Theory and Mathematical Modelling
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 178 - Number 27 |
| Year of Publication: 2019 |
| Authors: Ezeogu Apollos |
10.5120/ijca2019919089
|
Ezeogu Apollos . Memristor Theory and Mathematical Modelling. International Journal of Computer Applications. 178, 27 ( Jun 2019), 1-8. DOI=10.5120/ijca2019919089
Abstract
Memristor is the newly discovered fourth circuit element. The other familiar three circuit elements are resistor, capacitor and inductor. In 1971, Leon Chua reasoned that there should be a fourth circuit element on the ground of symmetry that gives a relationship between flux and charge. He named it memory resistor, abbreviated as memristor. The first experimental manufacture of this fourth element was published in May 2008 by HP researchers team led by Stanley Williams. Afterwords, researchers have been exploring memristor and its possible applications. Thus, this report studies and presents the general theory of memristor, classification of memristor, the I-V characteristics, the non volatility memory, the switching mechanism for bipolar switching in TiO2, the mathematical models of memristor including the various window functions; and also potential applications of memristor. Meanwhile, where necessary simulation are carried out using Cadence Virtuoso design tool and VerilogA for modelling the memristor for simulation purpose.
References
- Chua, L.O., ”Memristor- the missing circuit element”, IEEE Trans. Circuit Theory, 1971,vol. CT-18, no. 5, p507 -519.
- Chua, L.O. and Kang, S.M., ”Memristive devices and Systems”, Proceedings of the IEEE 1976, vol. 64, no. 2, p209 -223.
- Ezeogu, Apollos ”Process Variation Aware Non- Volatile (Memristive) 9T SRAM Memory Design in Nano-CMOS Technologies”, M.Sc. Theses submitted to University of Bristol, United Kingdom, Oct.2013
- Kavehei, O.; Kim, Y.S; Igbal, A.; Eshraghian, K.; Al-Sarawi, S.F.; Abbott, D., ”The Fourth Element: Characteristics, modeling, and Electromagnetic Theory of the memristor”, In proceeding of: Communication, Circuits and systems, 2009. ICCCAS 2009, International Conference on IEEE Xplore.
- Chua Leon, ”Everything You Wish to Know About Memristors But Are Afraid to Ask”, RADIOENGINEERING, VOL. 24, NO. 2, JUNE 2015
- Dmitri B. Strukov, G. S. Snider, Duncan. R. Stewart, R. Stanley Williams,”The missing memristor found,” Nature, vol. 453, no. 179, pp. 80-83, May 2008.
- Dmitri B. Strukov, Julien L. Borghetti, R. Stanley Williams, ”Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior.” Small 2009. 5, no. 9. 1058??1063.
- http://spectrum.ieee.org/semiconductors/ processors/how-we-found-the-missing-memristor
- Dmitri B. Strukov et al. ”Hybrid CMOS/Memristor Circuits”, Circuits and Systems (ISCAS), Proceedings of 2010 IEEE International Symposium on May 30 2010-June 2 2010, pp. 1967 - 1970, Paris
- Hyongsuk Kim, Maheshwar Pd. Sah, Changju Yang, Seongik Cho, and Leon O. Chua, ”Memristor Emulator for Memristor Circuit Applications” IEEE Transactions on Circuits and Systems??I: Regular Papers Vol. 59, No. 10, October 2012.
- Y.N. Joglekar and S.J. Wolf, ”The elusive memristor: properties of basic electrical circuits,” Eur. J. Phys., vol. 30, pp. 661-675, 2009.
- Hazem Elgabra, Ilyas A.H. Farhat, Ahmed S. Al Hosani, Dirar Homouz, Baker Mohammad, ” Mathematical Modeling of a Memristor Device” 2012 International Conference on Innovations in Information Technology (IIT), pp 156 - 161.
- Zdenek Biolek, Dalibor Biolek, and Viera Biolkova, ”SPICE Model of memristor with nonlinear dopant drift”, Radio Engineering, Vol. 18, pp. 210-214, 2009 2009.
- J. J. Yang, M. D. Pickett, X. M. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, ”Memristive Switching Mechanism for Metal/Oxide/Metal Nanodevices,” Nature Nanotechnology, Vol. 3, pp. 429 - 433, Jul 2008.
- Themistoklis Prodromakis, Boon Pin Peh, Christos Papavassiliou, Christofer Toumazou,” A Versatile Memristor Model With Nonlinear Dopant Kinetics”, IEEE Transaction on electronic Devices, Vol. 58, No. 9, September 2011.
- Pickett MD, Strukov DB, Borghetti JL, Yang JJ, Snider GS, Stewart DR, Williams RS. Switching dynamics in titanium dioxide memristive devices. Journal of Applied Physics. 2009;106(7):074508-6-074508-1. DOI: 10.1063/1.3236506
- S, Kvatinsky, E.G. Friedman, A. Kolodny, and U. C. Weiser ”TEAM: ThEshold Adaptive Memristor Model” IEEE Transactions on Circuits and Systems 1: Regular Papers, vol.-, p.-, 2012.
- Adeyemo, A., Jabir, A., Mathew, J., Martinelli, E., Di Natale, C., and Ottavi, M. ” Reliable gas sensing with memristive crossbar array” 23rd IEEE Int’l sympossium on IOLTS, Spain. http://dx.doi.org/10.1109/IOLTS.2017.8046228
- Yang, X., Adeyemo, A., Bala, A. and Jabir A. ”Novel Techniques for memristive multifunction logic design” the VLSI Integration Journal, Spain. http://doi.org/10.1016/j.vlsi.2017.09.005
- Adeyemo Adedotun.”Design of Reliable Memristive-Based Resistive RAMs (ReRAM)”, M.Sc. Theses submitted to University of Bristol, United Kingdom, Sep. 2013
- Zha J, Huang H, Liu Y. ”A novel window function for memristor model with application in programming analog circuits” IEEE Transactions On Circuits and Systems-II: Express Briefs. 2016;63(5):423- 427.DOI:0.1109/TCSII.2015.2505959
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