We apologize for a recent technical issue with our email system, which temporarily affected account activations. Accounts have now been activated. Authors may proceed with paper submissions. PhDFocusTM
CFP last date
20 November 2024
Reseach Article

Bandwidth Analysis of a p-π-n Si Photodetector

by Mohammed Sh. Ahmed, Yassir TH. AL-Tulaihi, Haider TH. Salim ALRikabi
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 134 - Number 12
Year of Publication: 2016
Authors: Mohammed Sh. Ahmed, Yassir TH. AL-Tulaihi, Haider TH. Salim ALRikabi
10.5120/ijca2016908097

Mohammed Sh. Ahmed, Yassir TH. AL-Tulaihi, Haider TH. Salim ALRikabi . Bandwidth Analysis of a p-π-n Si Photodetector. International Journal of Computer Applications. 134, 12 ( January 2016), 35-41. DOI=10.5120/ijca2016908097

@article{ 10.5120/ijca2016908097,
author = { Mohammed Sh. Ahmed, Yassir TH. AL-Tulaihi, Haider TH. Salim ALRikabi },
title = { Bandwidth Analysis of a p-π-n Si Photodetector },
journal = { International Journal of Computer Applications },
issue_date = { January 2016 },
volume = { 134 },
number = { 12 },
month = { January },
year = { 2016 },
issn = { 0975-8887 },
pages = { 35-41 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume134/number12/23969-2016908097/ },
doi = { 10.5120/ijca2016908097 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T23:34:03.577705+05:30
%A Mohammed Sh. Ahmed
%A Yassir TH. AL-Tulaihi
%A Haider TH. Salim ALRikabi
%T Bandwidth Analysis of a p-π-n Si Photodetector
%J International Journal of Computer Applications
%@ 0975-8887
%V 134
%N 12
%P 35-41
%D 2016
%I Foundation of Computer Science (FCS), NY, USA
Abstract

The aim of this study is the bandwidth analysis of a p-π-n photodetector, three different junction areas (0.008, 0.014, 0.02) mm2 were used with π-layer width of 5 μm, and the π-layer width required to get maximum bandwidth is 3.4 μm. The results showed that the bandwidth increases with the decreasing of detector area, this is because when detector area decreases the junction capacitance also decreases. The obtained bandwidth is 7.8 GHz at π-layer width of 5 μm, the required biasing voltage is 17.55 V. The best bandwidth obtained is 9 GHz at a π-layer width of 3.4 μm, an area of 0.008 mm2 and required biasing voltage is 11.934 V. In this paper mathematical relations have been found to get bandwidth, maximum bandwidth, and the requirements to achieve it. The requirements include choosing values of, π-layer width, biasing voltage, electric field, and carriers velocity. The mathematical relations results are very close to the experimental results. The results are achieved with the aid of MATLAB programming tool version 8.5.0.1976013 (R2015a).

References
  1. H. C. Lee, and B. V. Zeghbroeck, "A novel high-speed silicon MSM photodetector operating at 830 nm wavelength," IEEE Electron Device Letters, vol. 16, no. 5, pp. 175–177, May 1995.
  2. J. Y. L., Ho, and K. S. Wong, "High-speed and high-sensitivity silicon-on-insulator metal-semiconductor-metal photodetector with trench structure," Applied Physics Letters, vol. 69, no. 1, pp. 16–18, May 1996.
  3. G. W. Neudeck, J. Denton, J. Qi, J. D. Schaub, R. Li, and J. C. Campbell, "Selective epitaxial growth Si resonant-cavity photodetector," IEEE Photonics Technology Letters, vol. 10, no. 1, pp. 129–131, January 1998.
  4. A. Habibpoor and H. R. Mashayekhi, "Numerical modeling of the transient response of metal-semiconductor-metal photodetector using discrete Fourier transform method," Journal of Physics, vol. 286, no. 1, pp. 1–6, 2011.
  5. Y. Hu, B. S. Marks, C. R. Menyuk, V. J. Urick and K. J. Williams, "Modeling Sources of Nonlinearity in a Simple p-i-n Photodetector," Journal of Lightwave Technology, vol. 32, no. 20, pp. 3710–3720, April 2014.
  6. J. P. Colinge, and C. A. Colinge, “Physics of semiconductor devices,” Springer, 2005.
  7. SasaRadovanovic, Anne Johan Annema, and Bram Nauta, “High-speed photodiodes in standard CMOS technology,” Springer, 2006.
  8. Safa O. Kasap, “Optoelectronics &photonics,” 2nd Ed., Prentice Hall, 2012.
  9. B. Van Zeghbroeck, “Principles of semiconductor devices,” Prentice Hall, 2001.
  10. Donald A. Neamen, “Semiconductor physics and devices,” 3rd Ed., McGraw-Hill, 2003.
  11. Chuang Shun Lien, and Shun L. Chuang, “Physics of optoelectronic devices,” John Wiley & Sons, 1995.
  12. Zhicai He, ChengmeiZhong, Xun Huang, Wai Yeung Wong, Hongbin Wu, Liwei Chen, Shijian Su, and Yong Cao, "Simultaneous enhancement of open-circuit voltage, short-circuit current density, and fill factor in polymer solar cells," dvanced Materials, vol. 23, no. 40, pp. 4636–4643, Oct. 2011.
  13. Chen, Jau Wen, Dae Kaen Kim, and Mukunda B. Das. "Transit-time limited high-frequency response characteristics of MSM photodetectors," Electron Devices, IEEE Transactions, vol. 43, no. 11, pp. 1838-1843, 1996.
  14. S. M. Sze, and Kwok K. NG, “Physics of Semiconductor Devices,” 3rd Ed., John Wiley & Sons, 2007.
  15. B. Gao, H. Wang, C. Y. Liu, Q. Q. Meng, Y. Tian, K. S. Ang, and J. H. Si, “Design and analysis of InP-based waveguide uni-traveling carrier photodiode integrated on silicon-on-insulator through Al2O3 bonding layer,” IEEE Photonics Journal, vol. 6, no. 5, Aug. 2014.
  16. Rogalski A., “Fundamentals of infrared detector technologies,” 2nd Ed., CRC Press, 2010.
Index Terms

Computer Science
Information Sciences

Keywords

Si p-π-n Photodetector Bandwidth Photodiode.