CFP last date
20 December 2024
Reseach Article

Review on Performance of different Low Power SRAM Cell Structures

by Manish Shrivas, Saima Ayyub, Paresh Rawat
International Journal of Computer Applications
Foundation of Computer Science (FCS), NY, USA
Volume 127 - Number 3
Year of Publication: 2015
Authors: Manish Shrivas, Saima Ayyub, Paresh Rawat
10.5120/ijca2015906350

Manish Shrivas, Saima Ayyub, Paresh Rawat . Review on Performance of different Low Power SRAM Cell Structures. International Journal of Computer Applications. 127, 3 ( October 2015), 26-30. DOI=10.5120/ijca2015906350

@article{ 10.5120/ijca2015906350,
author = { Manish Shrivas, Saima Ayyub, Paresh Rawat },
title = { Review on Performance of different Low Power SRAM Cell Structures },
journal = { International Journal of Computer Applications },
issue_date = { October 2015 },
volume = { 127 },
number = { 3 },
month = { October },
year = { 2015 },
issn = { 0975-8887 },
pages = { 26-30 },
numpages = {9},
url = { https://ijcaonline.org/archives/volume127/number3/22710-2015906350/ },
doi = { 10.5120/ijca2015906350 },
publisher = {Foundation of Computer Science (FCS), NY, USA},
address = {New York, USA}
}
%0 Journal Article
%1 2024-02-06T23:18:55.198772+05:30
%A Manish Shrivas
%A Saima Ayyub
%A Paresh Rawat
%T Review on Performance of different Low Power SRAM Cell Structures
%J International Journal of Computer Applications
%@ 0975-8887
%V 127
%N 3
%P 26-30
%D 2015
%I Foundation of Computer Science (FCS), NY, USA
Abstract

Scaling in Silicon technology, usage of SRAM Cells has been increased to large extent while designing the embedded Cache and system on-chips in CMOS technology. Power consumption, packing density and the speed are the major factors of concern for designing a chip. The consumption of power and speed of SRAMs are some important issues among a number of factors that provides a solution which describes multiple designs that minimize the consumption of power and this review article is also based on that. This article presents the simulation of 6T, 9T, LP10T, ST10T and WRE8T SRAM cells. All the simulations have been carried out on 90nm at Microwind EDA tool.

References
  1. Borkar S. Design challenges of technology scaling. IEEE Micro 1999;19(4):23.
  2. Brews J. High speed semiconductor devices. New York: Wiley; 1990. pp. 139–210.
  3. Roy K, Prasad SC. Low power CMOS VLSI circuit design. New York: Wiley Interscience Publications; 2000. p. 27–29.
  4. Taur Y, Ning TH. Fundamentals of modern VLSI devices. New York: Cambridge University Press; 1998. pp. 285–286.
  5. Mostafa H, Anis M, Elmasry M. Adaptive body bias for reducing the impacts of NBTI and process variations on 6T SRAM cells. IEEE Trans Circ Syst – I 2011;58(12):2859–71.
  6. Kao J, Chandrakasan A, Antoniadis D. Transistor sizing issues and tool for multi threshold cmos technology. In: IEEE 34th design automation conference (DAC); 1997. p. 409–14.
  7. Kao J, Narenda S, Chandrakasan A. MTCMOS hierarchical sizing based on mutual exclusive discharge patterns. In: IEEE 35th design automation conference (DAC); 1998. p. 495–500.
  8. Kim TH, Liu J, Keane J, Kim CH. Circuit techniques for ultra-low power subthreshold SRAMs. In: IEEE international symposium on circuits and systems (ISCAS); 2008. p. 2574–77.
  9. Liu Z, Kursun V. Characterization of a novel nine-transistor SRAM cell. IEEE Trans Very Large Scale Integr (VLSI) Syst 2008;16:488–92. No. 4.
  10. Singh S, Arora N, Gupta N, Suthar M. Leakage reduction in differential l0T SRAM cell using gated VDD control technique. In: International conference on computing, electronics and electrical technologies; 2012. p. 610–4.
  11. J. P. Kulkarni, K. Kim, and K. Roy, “A 160 mV robust Schmitt trigger based subthreshold SRAM,” IEEE J. Solid-State Circuits, vol. 42, no. 10, pp. 2303–2313, Oct. 2007.
  12. Ghasem Pasandi and Sied Mehdi Fakhraie, “An 8T Low-Voltage and Low-Leakage Half-Selection Disturb-Free SRAM Using Bulk-CMOS and FinFETs,” IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 7,pp. 2357-2363, JULY 2014.
  13. J. P. Kulkarni, K. Kim, and K. Roy, “A 160 mV robust Schmitt trigger based subthreshold SRAM,” IEEE J. Solid-State Circuits, vol. 42, no. 10, pp. 2303–2313, Oct. 2007.
  14. H. Noguchi, S. Okumura, Y. Iguchi, H. Fujiwara, Y. Morita, K. Nii, H. Kawaguchi, and M. Yoshimoto, “Which is the best dual-port SRAM in 45-nm process technology?—8T, 10T single end, and 10T differential,” in Proc. IEEE ICICDT, Jun. 2008, pp. 55–58.
Index Terms

Computer Science
Information Sciences

Keywords

Cache Memory CMOS Hold Power Speed.