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High EMI Resistivity CMOS Operational Amplifier
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 111 - Number 1 |
| Year of Publication: 2015 |
| Authors: Lavlesh Sharma, Shyam Akashe |
10.5120/19503-1100
|
Lavlesh Sharma, Shyam Akashe . High EMI Resistivity CMOS Operational Amplifier. International Journal of Computer Applications. 111, 1 ( February 2015), 27-30. DOI=10.5120/19503-1100
Abstract
In this paper a high resistant EMI interference CMOS operational amplifier has been designed and simulated. It is designed by implementing easy modification of the differential pair with active current load. The power amplifier seems to be leading the output voltage power with respect to the input supply given, the two stage power amplifier was designed in this current technology and results are noted below. CMOS power amplifier is a type of power amplifier designed by using CMOS transistors connected together and get the output gain of amplifier . The desired input stage can be produce using standard CMOS technologies, and it also does not requires extra levels of masking process, such as triple well, nor external components are required. Analysis and results have been provided for very large interferences, which arise from the input pin and result produced are noted precisely.
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