The week's pick
Reseach Article
Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve
| International Journal of Computer Applications |
| Foundation of Computer Science (FCS), NY, USA |
| Volume 1 - Number 7 |
| Year of Publication: 2010 |
| Authors: Viranjay M. Srivastava, G.Singh, K.S.Yadav |
10.5120/164-289
|
Viranjay M. Srivastava, G.Singh, K.S.Yadav . Application of VEE Pro Software for Measurement of MOS Device Parameters using C-V curve. International Journal of Computer Applications. 1, 7 ( February 2010), 43-46. DOI=10.5120/164-289
Abstract
For a capacitor formed of MOS device using Metal-silicon dioxide-silicon (MOS) layers with an oxide thickness of 528 Å (measured optically), some of the material parameters were found from the curve drawn between Capacitance vs Voltage (C-V) through the Visual Engineering Environment Programming (VEE Pro) software. To perform the measurment, process by a distance, from the hazardous room, we use VEE Pro software. In this research, to find good result, vary the voltage with smaller increments and perform the measurements by vary the applying voltage from +7V to -7V and then back to +7V again and then save this result in a Data sheet with respect to temperature, volage and frequency using this program.
References
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- Viranjay M. Srivastava, "Capacitance-Voltage Measurement for Characterization of a Metal-Gate MOS Process", International Journal of Recent Trends in Engineering (IJRTE), vol. 1, no. 4, May 2009, India, 4-7. http://www.academypublisher.com/ijrte/vol01/no04/ijrte0104004007.pdf
- Nicollian, E.H. and Brews, J.R., "MOS Physics and Technology," Wiley, New York, 1982
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